III-V group MBE (Molecular Beam Epitaxy)
| Base pressure | 1×10-10Torr |
| Installed sources | Ga,Al,In（Group III） Si, Be (Dopants) Mn, Fe (Transition element, for magnetic material） As（Group V) EPI Valved cracker cell 500 cc Sb (group V) MBE Komponenten valved cracker cell 420 cc |
| In-situ observation | Reflection High Energy Electron Diffraction (RHEED) |
IV group MBE (Molecular Beam Epitaxy)
| Installed sources | Si, Ge（IV group） B (Dopant) Mn, Co, Fe, MgO |
| In-situ observation | Reflection High Energy Electron Diffraction, RHEED) |
He-3 Magnetotransport Measurement System (300 mK)
| Temperature range ： 300mK ~ RT |
| Magnetic field range ： ~１T |
Cryogenic Magnetotransport Measurement Systems（3 systems）
| Temperature range ： 3.5K～RT |
| Magnetic field range ： ~１T |
| With rotating motor |
Magnetic Circular Dichroism (MCD) System –
JASCO J700
| Photo-detector | ： | GaAs, S1 Photomultiplier (wavelength range 0.2-1.1μm) |
| Magnetic field range | ： | ~1.2T |
| Temperature range | ： | 4.5K ~ RT |