III-V group MBE (Molecular Beam Epitaxy)
Base pressure | 1×10-10Torr |
Installed sources | Ga,Al,In(Group III) Si, Be (Dopants) Mn, Fe (Transition element, for magnetic material) As(Group V) EPI Valved cracker cell 500 cc Sb (group V) MBE Komponenten valved cracker cell 420 cc |
In-situ observation | Reflection High Energy Electron Diffraction (RHEED) |

IV group MBE (Molecular Beam Epitaxy)
Installed sources | Si, Ge(IV group) B (Dopant) Mn, Co, Fe, MgO |
In-situ observation | Reflection High Energy Electron Diffraction, RHEED) |

He-3 Magnetotransport Measurement System (300 mK)
Temperature range : 300mK ~ RT |
Magnetic field range : ~1T |

Cryogenic Magnetotransport Measurement Systems(3 systems)
Temperature range : 3.5K~RT |
Magnetic field range : ~1T |
With rotating motor |

Magnetic Circular Dichroism (MCD) System –
JASCO J700

Photo-detector | : | GaAs, S1 Photomultiplier (wavelength range 0.2-1.1μm) |
Magnetic field range | : | ~1.2T |
Temperature range | : | 4.5K ~ RT |