III-V group MBE (Molecular Beam Epitaxy)

Base pressure1×10-10Torr
Installed sourcesGa,Al,In(Group III)
Si, Be (Dopants)
Mn, Fe (Transition element, for magnetic material)
As(Group V) EPI Valved cracker cell 500 cc
Sb (group V) MBE Komponenten valved cracker cell 420 cc
In-situ observationReflection High Energy Electron Diffraction (RHEED)

IV group MBE (Molecular Beam Epitaxy)

Installed sourcesSi, Ge(IV group)
B (Dopant)
Mn, Co, Fe, MgO
In-situ observation Reflection High Energy Electron Diffraction, RHEED)

He-3 Magnetotransport Measurement System (300 mK)

Temperature range : 300mK ~ RT
Magnetic field range : ~1T

Cryogenic Magnetotransport Measurement Systems(3 systems)

Temperature range : 3.5K~RT
Magnetic field range : ~1T
With rotating motor

Magnetic Circular Dichroism (MCD) System –

Photo-detector GaAs, S1 Photomultiplier (wavelength range 0.2-1.1μm)
Magnetic field range~1.2T
Temperature range4.5K ~ RT