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International Journal Papers (英文論文誌)

2024

  1. Takahito Takeda, Kengo Takase, Vladimir N. Strokov, Masaaki Tanaka, and Masaki Kobayashi “Identification of Electronic Dimensionality Reduction in Semiconductor Quantum Well StructuresJ. Electron Spectrosc. Relat. Phenom. 270, pp.147406/1-5 (2024).
    DOI: 10.1016/j.elspec.2023.147406
  2. Shinobu Ohya, Shun Tsuruoka, Masaya Kaneda, Hikari Shinya, Tetsuya Fukushima, Takahito Takeda, Yuriko Tadano, Tatsuro Endo, Le Duc Anh, Akira Masago, Hiroshi Katayama-Yoshida, Masaaki Tanaka,
    Colossal Magnetoresistive Switching Induced by d0 Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes“,
    Adv. Mater. 2307389 (2024).
  3. Kohdai Inagaki, Keita Ishihara, Tomoki Hotta, Yuichi Seki, Takahito Takeda, Tatsuhiro Ishida, Daiki Ootsuki, Ikuto Kawasaki, Shin-Ichi Fujimori, Masaaki Tanaka, Le Duc Anh, Masaki Kobayashi,
    Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by focused-ion-beam irradiation
    Appl. Phys. Lett. 124, 021602 (2024)
  4. Harunori Shiratani, Kosuke Takiguchi, Le Duc Anh, and Masaaki Tanaka
    Observation of large spin-polarized Fermi surface of a magnetically proximitized semiconductor quantum well
    Commun. Phys. 7, 6/1-7 (2024).
    DOI: 10.1038/s42005-023-01485-6
  5. Takuma Arai, Shingo Kaneta-Takada, Le Duc Anh, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya,
    Reduced dead layers and magnetic anisotropy change in La2/3Sr1/3MnO3 membranes released from an SrTiO3 substrate“,
    Appl. Phys. Lett. 124, 062403 (2024)
  6. Takahito Takeda, Takuma Arai, Kohei Yamagami, Le Duc Anh, Masaaki Tanaka, Masaki Kobayashi, Shinobu Ohya,
    Mechanism of ferromagnetism enhancement in a La2/3 Sr1/3 MnO3 membrane released from epitaxial strain“,
    https://arxiv.org/abs/2402.01179

2023

  1. Shobhit Goel, Nguyen Huynh Duy Khang, Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka,
    “Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure”,,
    Scientific Reports 13, 2181/1-9 (2023).
  2. Tatsuro Endo,  Shun Tsuruoka,  Yuriko Tadano,  Shingo Kaneta-Takada,  Yuichi Seki,  Masaki Kobayashi,  Le Duc Anh,  Munetoshi Seki,  Hitoshi Tabata,  Masaaki Tanaka,  Shinobu Ohya,
    “Giant Spin-Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott-Insulator Region”
    Adv. Mater. 35, 2300110 (2023).
  3. Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Hiroshi Irie, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, and Hideki Yamamoto,
    “Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly”
    Phys. Rev. Materials 7, 054406 (2023).
  4. Miao Jiang,  Hirokatsu Asahara,  Shinobu Ohya,  Masaaki Tanaka,
    “Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer.”
    Adv. Sci., 2301540 (2023).
  5. Akhil Pillai, Shobhit Goel, Le Duc Anh, and Masaaki Tanaka,
    “Control of magnetic anisotropy by epitaxial strain in the n-type ferromagnetic semiconductor (In,Fe)Sb”
    Phys. Rev. B 108, 014421 (2023)
  6. Le Duc Anh, Masaki Kobayashi, Takahito Takeda, Kohsei Araki, Ryo Okano, Toshihide Sumi, Masafumi Horio, Kohei Yamamoto, Yuya Kubota, Shigeki Owada, Makina Yabashi, Iwao Matsuda, and Masaaki Tanaka,
    Ultrafast subpicosecond magnetisation of a two-dimensional ferromagnet
    Adv. Mater. 35, 2301347/1-8 (2023).
    DOI: 10.1002/adma.202301347
  7. Chenda Wang, Miao Jiang, Shinobu Ohya, and Masaaki Tanaka
    Quantitative characterization of current-induced self-spin–orbit torques in a perpendicularly magnetized (Ga,Mn)As single thin film
    Appl. Phys. Lett. 123, 152402/1-6 (2023). Editor’s Pick
    DOI: 10.1063/5.0170652
  8. Seiji Aota, Le Duc Anh, and Masaaki Tanaka
    Growth, crystal structures, and magnetic properties of Fe–As films grown on GaAs (111)B substrates by molecular beam epitaxy
    J. Appl. Phys. 134, 235104/1-7 (2023).
    DOI: 10.1063/5.0177679

2022

  1. Tomoki Hotta, Kengo Takase, Kosuke Takiguchi, Karumuri Sriharsha, Le Duc Anh, and Masaaki Tanaka,
    “Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb”,
    AIP Advances 12, 015307/1-6 (2022).
  2. Nguyen Thanh Tu, Tomohiro Otsuka, Yuto Arakawa, Le Duc Anh, Masaaki Tanaka, and Pham Nam Hai,
    “Spin transport in fully ferromagnetic p-n junctions”,
    J. Appl. Phys. 131, 013902/1-14 (2022).
  3. Shoma Arai, Shingo Kaneta-Takada, Le Duc Anh, Masaaki Tanaka, and Shinobu Ohya,
    “Theoretical analysis of the inverse Edelstein effect at the LaAlO3/SrTiO3 interface with an effective tight-binding model: Important role of the second dxy subband”,
    Appl. Phys. Express 15, 013005/1-4 (2022).
  4. Hiroshi Terada, Shinobu Ohya, and Masaaki Tanaka,
    “Bias-dependent two-phase anisotropy in magnetoresistance of a GaMnAs-based magnetic tunnel junction”,
    Appl. Phys. Express, 15, 033001/1-5 (2022).
  5. Masaki Kobayashi, Munetoshi Seki, Masahiro Suzuki, Ryo Okano, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Atsushi Fujimori, Masaaki Tanaka, and Hitoshi Tabata,
    Intervalence charge transfer and charge transport in the spinel ferrite ferromagnetic semiconductor Ru-doped CoFe2O4,
    Phys. Rev. B 105, 205103/1-6 (2022).
  6. T. Takeda, S. Sakamoto, L. D. Anh, Y. Takeda, S.-I. Fujimori, M. Kitamura, K. Horiba, H. Kumigashira, A. Fujimori, M. Tanaka, and M. Kobayashi.,
    “Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As”,
    Phys. Rev. B 105, 195155/1-10 (2022).
  7. M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, and P. N. Hai,
    “Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy”,
    Phys. Rev. Materials 6, 074403/1-7 (2022).
  8. Kosuke Takiguchi, Kyosuke Okamura, Le Duc Anh and Masaaki Tanaka,
    “Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures”,
    Phys. Rev. B 105, 235202/1-7 (2022).
  9. S. Kaneta-Takada, M. Kitamura, S. Arai, T. Arai, R. Okano, L. D. Anh, T. Endo, K. Horiba, H. Kumigashira, M. Kobayashi, M. Seki, H. Tabata, M. Tanaka, and S. Ohya, ,
    “Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly-correlated metal interlayer”, ,
    Nature Commun 13, 5631/1-8 (2022).
  10. Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger,Toshihiro Nomura, Yoshimitsu Kohama, Sergey A. Nikolaev, Hena Das, Hiroshi Irie, Kosuke Takiguchi, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, and Hideki Yamamoto, ,
    High-mobility two-dimensional carriers from surface Fermi arcs in magnetic Weyl semimetal films, ,
    npj Quantum Mater. 7, 102/1-12 (2022).
  11. Kosuke Takiguchi, Le Duc Anh, Takahiro Chiba, Harunori Shiratani, Ryota Fukuzawa, Takuji Takahashi, and Masaaki Tanaka ,
    “Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect”,,
    Nature Communications 13, 6538/1-7 (2022).
  12. Shoichi Sato, Masaaki Tanaka, and Ryosho Nakane,
    “Electron Spin Transport in a Metal-Oxide-Semiconductor Si Two-Dimensional Inversion Channel: Effect of Hydrogen Annealing on Spin-Scattering Mechanism and Spin Lifetime”,
    Phys. Rev. Applied 18, 064071/1-11 (2022).

2021

  1. R. Suzuki, Y. Tadano, M. Tanaka, and S. Ohya, Unconventional bias dependence of tunnel magnetoresistance induced by the Coulomb blockade effect, AIP Advances 11, 125029 (2021).
  2. Miao Jiang, Eisuke Matsushita, Yota Takamura, Le Duc Anh, Shigeki Nakagawa, Shinobu Ohya, and Masaaki Tanaka, Spin-orbit toruque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi, AIP. Advances. 11, 115014 (2021).
  3. Le Duc Anh, Kengo Takase, Takahiro Chiba, Yohei Kota, Kosuke Takiguchi, and Masaaki Tanaka “Elemental Topological Dirac Semimetal α-Sn with High Quantum Mobility” Advanced Materials DOI:10.1002/adma.202104645 (2021).
  4. Le Duc Anh, Taiki Hayakawa, Yuji Nakagawa, Hikari Shinya, Tetsuya Fukushima, Hiroshi Katayama-Yoshida, Yoshihiro Iwasa, and Masaaki Tanaka, “Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures”, Nature Communications 12, 4201 (2021).
  5. Karumuri Sriharsha, Le Duc Anh, Masaaki Tanaka, Ferromagnetic Fe-doped InAs quantum dots with high Curie temperature, Appl. Phys. Express 14, 083002 (2021).
  6. Masaki Kobayashi, Le Duc Anh, Masahiro Suzuki, Shingo Kaneta-Takada, Yukiharu Takeda, Shin-ichi, Fujimori, Masaaki Tanaka, Shinobu Ohya, and Atsushi Fujimori, “Alternation of Magnetic Anisotropy Accompanied by Metal-Insulator Transition in Strained Ultrathin Manganite Heterostructures”, Phys. Rev. Applied 15, 064019 (2021).
  7. M. Kobayashi, Le Duc Anh, J. Minár, W. Khan, S. Borek, P. N. Hai, Y. Harada, T. Schmitt, M. Oshima, A. Fujimori, M. Tanaka, and V. N. Strocov, “Minority-Spin Impurity Band in n-Type (In,Fe)As: A Materials Perspective for Ferromagnetic Semiconductors”, Phys. Rev. B 103, 115111 (2021).
  8. Yuki K. Wakabayashi, Shingo Kaneta-Takada, Yoshiharu Krockenberger, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, and Hideki Yamamoto, Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: Comparison with stoichiometric SrRuO3 films, AIP. Advances. 11, 035226 (2021).
  9. Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, and Hideki Yamamoto, Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films, Appl. Phys. Lett. 118, 092408 (2021).

2020

  1. Kosuke Takiguchi, Yuki K. Wakabayashi, Hiroshi Irie, Yoshiharu Krockenberger, Takuma Otsuka, Hiroshi Sawada, Sergey A. Nikolaev, Hena Das, Masaaki Tanaka, Yoshitaka Taniyasu, and Hideki Yamamoto, Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide, Nat. Commun. 11 4969 (2020)
  2. K. Sriharsha, L. D. Anh, Y. Shimada, T. Takahashi, M. Tanaka, Growth and characterization of ferromagnetic Fe-doped GaSb quantum dots with high Curie temperature, APL Materials (2020) (in press)
  3. Shingo Kaneta-Kanada, Michihiro Yamada, Shoichi Sato, Shoma Arai, Le Duc Anh, Kohei Hamaya and Shinobu Ohya, Enhancement of the spin Hall angle by interdiffusion of atoms in Co2FeAl0.5Si0.5/n-Ge heterostructures, Phys. Rev. Applied 14, 024096 (2020).
  4. K. Takase, L. D. Anh, K. Takiguchi, M. Tanaka, Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature Appl. Phys. Lett. 117, 092402 (2020).
  5. R. Suzuki, Y. Tadano, M. Tanaka, and S. Ohya, Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γAl2O3/Nb-doped SrTiO3, AIP Adv. 10, 085115 (2020).
  6. Le Duc Anh, Taiki Hayakawa, Kohei Okamoto, Nguyen Thanh Tu, Masaaki Tanaka, Transport and magnetic properties of co-doped ferromagnetic semiconductor (In,Fe,Mn)As, Appl. Phys. Express 13, 083005 (2020).
  7. T. Takeda, M. Suzuki, Le Duc Anh , N. T. Tu, T. Schmitt, S. Yoshida, M. Sakano, K. Ishizaka, Y. Takeda, S. Fujimori, M. Seki, H. Tabata, A. Fujimori, V. N. Strocov, M. Tanaka, and M. Kobayashi, Hybridization between the ligand p band and Fe-3d orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb, Phys. Rev. B 101, 155142 (2020).
  8. Le Duc Anh, Shingo Kaneta, Masashi Tokunaga, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya, High‐Mobility 2D Hole Gas at a SrTiO3 Interface. Adv. Mater. 7, 1906003 (2020). (Press release: UTokyo, Nikkei shimbun).
  9. S. Goel, L. D. Anh, S. Ohya, and M. Tanaka, Temperature dependence of magnetic anisotropy in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb, J. Appl. Phys. 127, 023904 (2020)
  10. S. Ohya, D. Araki, L. D. Anh, S. Kaneta, M. Seki, H. Tabata, and M. Tanaka, Efficient intrinsic spin-to-charge current conversion in an all-epitaxial single-crystal perovskite-oxide heterostructure of La0.67Sr0.33MnO3/LaAlO3/SrTiO3, Phys. Rev. Res2, 012014 (R) (2020).
  11. S. Sakamoto, Y. Nonaka, K. Ikeda, Zh. Chi, Y. Wan, M. Suzuki, A. Fujimori, L. D. Anh, P. N. Hai, Y. Takeda, Y. Saitoh, M. Kobayashi, M. Tanaka, Y. K. Wakabayashi, and H. Yamagami, Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb, Phys. Rev. B 101, 075204 (2020).
  12. Koki Chonan, Nguyen Huynh Duy Khang, Masaaki Tanaka, and Pham Nam Hai, “Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device”, Jpn. J. Appl. Phys. 59, pp.SGGI08/1-4 (2020). Doi: 10.7567/1347-4065/ab5b31

2019

  1. Le Duc Anh, Takashi Yamashita, Hiroki Yamasaki, Daisei Araki, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, and Shinobu Ohya, Ultralow-Power Orbital-Controlled Magnetization Switching Using a Ferromagnetic Oxide Interface. Phys. Rev. Applied. 12, 041001 (2019). DOI: https://doi.org/10.1103/PhysRevApplied.12.041001 Press Release : 日経新聞
  2. Kosuke Takiguchi, Le Duc Anh, Takahiro Chiba, Tomohiro Koyama, Daichi Chiba, Masaaki Tanaka, Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers. Nature Physics (2019) . DOI: https://doi.org/10.1038/s41567-019-0621-6 Press Release : UTokyo , 日経新聞, OPTRONICS ONLINE, EE Times Japan
  3. Shobhit Goel, Le Duc Anh, Nguyen Thanh Tu, Shinobu Ohya, and Masaaki Tanaka, In-plane to perpendicular magnetic anisotropy switching in heavily-Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb with high Curie temperature. Phys. Rev. Materials 3, 084417 (2019). DOI: 10.1103/PhysRevMaterials.3.084417.
  4. Shoya Sakamoto, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Pham Nam Hai, Le Duc Anh, Yuki K. Wakabayashi, Goro Shibata, Masafumi Horio, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, and Atsushi Fujimori. “Electronic structure of the high-TC ferromagnetic semiconductor (Ga,Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies”. Phys. Rev. B 100, 035204 (2019).
  5. Miao Jiang, Hirokatsu Asahara, Shoichi Sato, Toshiki Kanaki, Hiroki Yamasaki, Shinobu Ohya and Masaaki Tanaka “Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet” Nature Communications 10, 2590 (2019). https://doi.org/10.1038/s41467-019-10553-x
  6. Shingo Kaneta, Le Duc Anh, Karumuri Sriharsha, and Masaaki Tanaka “Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films” Appl. Phys. Express 12 pp. 073001/1-4 (2019). https://iopscience.iop.org/article/10.7567/1882-0786/ab25c8/meta
  7. Shobhit Goel, Le Duc Anh, Shinobu Ohya, and Masaaki Tanaka
    “Ferromagnetic resonance and control of magnetic anisotropy by epitaxial strain in ferromagnetic semiconductor (Ga0.8,Fe0.2)Sb at room temperature” Phys. Rev. B99, pp.014431/1-7 (2019). DOI: 10.1103/PhysRevB.99.014431 https://doi.org/10.1103/PhysRevB.99.014431
  8. Toshiki Kanaki, Shin Matsumoto, Sai Krishna Narayananellore, Hidekazu Saito, Yoshihiro Iwasa, Masaaki Tanaka, and Shinobu Ohya “Room-temperature operation of a vertical spin metal-oxide-semiconductor field-effect transistor-type device using an oxide semiconductor” Appl. Phys. Express 12, pp.23009/1-4 (2019). DOI:10.7567/1882-0786/aafed6
  9. Kento Nishijima, Nguyen Thanh Tu, Masaaki Tanaka, and Pham Nam Hai “Fe delta-doped (In,Fe)Sb ferromagnetic semiconductor thin films for magnetic-field sensors with ultrahigh Hall sensitivity” J. Crystal Growth 511, pp.127–131 (2019). DOI: 10.1016/j.jcrysgro.2019.01.030 https://doi.org/10.1016/j.jcrysgro.2019.01.030
  10. Tomoaki Ishii, Hiromichi Yamakawa, Toshiki Kanaki, Tatsuya Miyamoto, Noriaki Kida, Hiroshi Okamoto, Masaaki Tanaka, and Shinobu Ohya “Large terahertz magnetization response in ferromagnetic nanoparticles” Appl. Phys. Lett. 114, pp.062402/1-4 (2019). DOI: 10.1063/1.5088227 https://doi.org/10.1063/1.5088227
    Featured Article in Applied Physics Letters.
  11. Karumuri Sriharsha, Le Duc Anh, Nguyen Thanh Tu, Shobhit Goel, and Masaaki Tanaka “Magneto-optical spectra and the presence of an impurity band in p-type ferromagnetic semiconductor (Ga,Fe)Sb with high Curie temperature” APL Materials 7, pp.021105/1-6 (2019). DOI: 10.1063/1.5083175 https://doi.org/10.1063/1.5083175
  12. Ryosho Nakane, Mitsuki Ichihara, Shoichi Sato, and Masaaki Tanaka,
    “Nearly ideal spin tunneling efficiency in Fe/Mg/MgO/SiOx/n+-Si(001) junctions” Phys. Rev. Materials 3, pp.024411/1-9 (2019). DOI: 10.1103/PhysRevMaterials.3.024411 https://doi.org/10.1103/PhysRevMaterials.3.024411
  13. Taketomo Nakamura, Le Duc Anh, Yoshiaki Hashimoto, Shinobu Ohya, Masaaki Tanaka, and Shingo Katsumoto “Spin triplet superconductive proximity effect in a ferromagnetic semiconductor”
    Phys. Rev. Lett. 122, pp.107001/1-6 (2019). DOI: 10.1103/PhysRevLett.122.107001 https://doi.org/10.1103/PhysRevLett.122.107001
  14. Shoichi Sato, Mitsuki Ichihara, Masaaki Tanaka, and Ryosho Nakane “Electron spin and momentum lifetimes in two-dimensional Si accumulation channels: Demonstration of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors at room temperature” Phys. Rev. B 99, pp.165301/1-9 (2019). DOI: 10.1103/PhysRevB.99.165301 https://link.aps.org/doi/10.1103/PhysRevB.99.165301
  15. Hiep Duong Dinh, Masaaki Tanaka, and Hai Nam Pham,
    “Lateral silicon spin-valve devices with large spin-dependent magnetoresistance and output voltage” Advances in Natural Sciences: Nanoscience and Nanotechnology 10, pp.025001/1-8 (2019). DOI: 10.1088/2043-6254/ab11df

2018

  1. Hirokatsu Asahara, Toshiki Kanaki, Shinobu Ohya, and Masaaki Tanaka “Large spin-valve effect in a ferromagnetic-semiconductor GaMnAs-based lateral spin-valve device” Appl. Phys. Express 11 pp.033003/1-4 (2018). Doi: 10.7567/APEX.11.033003 https://doi.org/10.7567/APEX.11.033003
  2. Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka “Electrical tuning of the band alignment and magnetoconductance in an n type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode” Appl. Phys. Lett. 112, pp.102402/1-4 (2018). Doi: 10.1063/1.5010020
    https://doi.org/10.1063/1.5010020 Featured Article in Applied Physics Letters.
  3. Hiroshi Terada, Shinobu Ohya, and Masaaki Tanaka “Intrinsic transmission magnetic circular dichroism spectra of GaMnAs” AIP Advances 8, pp.035009/1-7 (2018). Doi: 10.1063/1.5020725 https://doi.org/10.1063/1.5020725
  4. Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka “Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature” Appl. Phys. Lett. 112, pp.122409/1-5 (2018). Doi:10.1063/1.5022828 https://doi.org/10.1063/1.5022828
  5. Ryota Suzuki, Yuki K. Wakabayashi, Kohei Okamoto, Masaaki Tanaka, and Shinobu Ohya “Quantum size effect in a Fe quantum well detected by resonant tunneling carriers injected from a p-type Ge semiconductor electrode” Appl. Phys. Lett. 112, pp.152402/1-5 (2018).
    DOI: 10.1063/1.5020355 https://doi.org/10.1063/1.5020355
  6. Taketomo Nakamura, Le Duc Anh, Yoshiaki Hashimoto, Yu Iwasaki, Shinobu Ohya, Masaaki Tanaka, and Shingo Katsumoto “Proximity-Induced Superconductivity in a Ferromagnetic Semiconductor (In,Fe)As” IOP Conf. Series: Journal of Physics: Conf. Series 969, pp.012036/1-5 (2018). Doi :10.1088/1742-6596/969/1/012036
  7. Tomoaki Ishii, Hiromichi Yamakawa, Toshiki Kanaki, Tatsuya Miyamoto, Noriaki Kida, Hiroshi Okamoto, Masaaki Tanaka, and Shinobu Ohya, “Ultrafast magnetization modulation induced by the electric field component of a terahertz pulse in a ferromagnetic-semiconductor thin film” Scientific Reports 8, 6901/1-6 (2018). DOI:10.1038/s41598-018-25266-2 https://www.nature.com/articles/s41598-018-25266-2
  8. Ryosho Nakane, Takato Hada, Shoichi Sato, and Masaaki Tanaka, “Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiOxNy tunnel barrier” Appl. Phys. Lett. 112, pp.182404/1-4 (2018).
    Doi: 10.1063/1.5004494
  9. Cong Tinh Bui, Christina A. C. Garcia, Nguyen Thanh Tu, Masaaki Tanaka, and Pham Nam Hai “Planar Nernst Effect and Mott Relation in (In,Fe)Sb Ferromagnetic Semiconductor” J. Appl. Phys. 123, pp.175102/1-7 (2018). Doi: 10.1063/1.5026452 Editors Pick and Featured Article in Journal of Applied Physics.
  10. Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, Daichi Chiba, Shinobu Ohya, and Masaaki Tanaka “Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor” Scientific Reports 8, pp.7195/1-7 (2018). DOI:10.1038/s41598-018-24958-z
  11. Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka “High-temperature ferromagnetism in a new n–type Fe-doped ferromagnetic semiconductor (In,Fe)Sb” Applied Physics Express 11, pp.063005/1-4 (2018). DOI: 10.7567/APEX.11.063005 https://doi.org/10.7567/APEX.11.063005 arXiv: 1706.00735 http://arxiv.org/abs/1706.00735
  12. Toshiki Kanaki, Hiroki Yamasaki, Hiroshi Terada, Yoshihiro Iwasa, Shinobu Ohya, and Masaaki Tanaka “Improved performance of a GaMnAs-based vertical spin electric double-layer transistor” Jpn. J. Appl. Phys. (Rapid Communications) 57, pp.090301/1-5 (2018). DOI: 10.7567/JJAP.57.090301 http://iopscience.iop.org/article/10.7567/JJAP.57.090301/meta
  13. Yoshisuke Ban,Yuki K. Wakabayashi,Ryosho Nakane,and Masaaki Tanaka “Impurity band conduction in group-IV ferromagnetic semiconductor GeFe with nanoscale fluctuation in Fe concentration” J. Appl. Phys. 124, pp.113902/1-11 (2018). DOI: 10.1063/1.5022543 https://doi.org/10.1063/1.5022543 arXiv:1706.04445
    https://arxiv.org/abs/1706.04445
  14. Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, and Ryosho Nakane “Cation distribution and magnetic properties in ultrathin (Ni1-xCox)Fe2O4 (x = 0 – 1) layers on Si(111) studied by soft X-ray magnetic circular dichroism” Phys. Rev. Materials 2, pp.104416/1-12 (2018). DOI: 10.1103/PhysRevMaterials.2.104416
    arXiv: 1808.02624 https://arxiv.org/abs/1808.02624

2017

  1. Yuki K. Wakabayashi, Ryota Akiyama, Yukiharu Takeda, Masafumi Horio, Goro Shibata, Shoya Sakamoto, Yoshisuke Ban, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, and Shinobu Ohya, “Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films” Phys. Rev. B.95, pp.014417/1-6 (2017). DOI: 10.1103/PhysRevB.95.014417 arXiv:1606.04263 http://arxiv.org/abs/1606.04263
  2. S. Sakamoto, Y. K. Wakabayashi, Y. Takeda, S.-i. Fujimori, H. Suzuki, Y. Ban, H. Yamagami, M. Tanaka, S. Ohya, and A. Fujimori “Origin of robust nanoscale ferromagnetism in Fe-doped Ge revealed by angle-resolved photoemission spectroscopy and first-principles calculation”
    Phys. Rev. B.95, pp.075203/1-5 (2017). DOI: 10.1103/PhysRevB.95.075203 arXiv:1605.05275 http://arxiv.org/abs/1605.05275
  3. Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, and Masaaki Tanaka
    “Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet” Nature Communications 8, 15387/1-8 (2017).
    https://www.nature.com/articles/ncomms15387 arXiv:1703.04294
    https://arxiv.org/abs/1703.04294
  4. Tatsuya Matou, Kento Takeshima, Le Anh, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, and Shinobu Ohya, “Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer,”
    Appl. Phys. Lett. 110, pp.212406/1-4 (2017). Doi: 10.1063/1.4984297
  5. Hiroshi Terada, Shinobu Ohya, Le Duc Anh, Yoshihiro Iwasa, and Masaaki Tanaka, “Magnetic anisotropy control by applying an electric field to the side surface of ferromagnetic films” Scientific Reports 7, pp.5618/1-7 (2017). DOI: 10.1038/s41598-017-05799-8
  6. Le Duc Anh, Noboru Okamoto, Munetoshi Seki, Hiroshi Tabata, Masaaki Tanaka, and Shinobu Ohya, “Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure”, Scientific Reports 7, pp.8715/1-7 (2017).
    DOI:10.1038/s41598-017-09125-0
  7. Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, Ryosho Nakane “Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism” Phys. Rev. B 96, pp.104410/1-11 (2017). DOI: 10.1103/PhysRevB.96.104410
    arXiv:1704.01712 https://arxiv.org/abs/1704.01712
  8. Shinobu Ohya, Akiyori Yamamoto, Tomonari Yamaguchi, Ryo Ishikawa, Ryota Akiyama, Le Duc Anh, Shobhit Goel, Yuki K. Wakabayashi, Shinji Kuroda, and Masaaki Tanaka “Observation of the inverse spin Hall effect in the topological crystalline insulator SnTe using spin pumping” Phys. Rev. B 96, pp.094424/1-5 (2017). DOI: 10.1103/PhysRevB.96.094424
  9. Kosuke Takiguchi, Yuki K. Wakabayashi, Kohei Okamoto, Masaaki Tanaka, and Shinobu Ohya “Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe” AIP Advances 7, pp.105202/1-7 (2017). Doi: 10.1063/1.5006926
  10. Duong Dinh Hiep, Masaaki Tanaka, and Pham Nam Hai “Inverse spin-valve effect in nanoscale Si-based spin-valve devices”
    J. Appl. Phys. 122, pp.223904/1-7 (2017). DOI: 10.1063/1.4994881
    https://doi.org/10.1063/1.4994881
  11. Shoichi Sato, Ryosho Nakane, Takato Hada, and Masaaki Tanaka
    “Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer” Phys. Rev. B 96, pp.235204/1-10 (2017).
    DOI: 10.1103/PhysRevB.96.235204 https://doi.org/10.1103/PhysRevB.96.235204 arXiv: 1704.06582 https://arxiv.org/abs/1704.06582

2016

  1. S. Sakamoto, L. D. Anh, P. N. Hai, G. Shibata, Y. Takeda, M. Kobayashi, Y. Takahashi, T. Koide, M. Tanaka, and A. Fujimori, “Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism”, Phys. Rev. B93, pp.035203/1-6 (2016). DOI: 10.1103/PhysRevB.93.035203
  2. Pham Nam Hai, Daiki Maruo, Le Duc Anh, and Masaaki Tanaka, “Continuous reddish-yellow visible-light emission at room temperature in manganese-doped silicon light-emitting diodes”, Phys. Rev. B 93, pp.094423/1-6 (2016). DOI: 10.1103/PhysRevB.93.094423
  3. Yuki K. Wakabayashi, Shoya Sakamoto, Yukiharu Takeda, Keisuke Ishigami, Yukio Takahashi, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, and Shinobu Ohya “Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe”, Scientific Reports 6, pp.23295/1-9 (2016). Doi: 10.1038/srep23295 arXiv 1502.00118 (January 31, 2015)
  4. Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka, “High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb”, Appl. Phys. Lett., 108, 192401 (2016).
  5. Tomoaki Ishii, Tadashi Kawazoe, Yusuke Hashimoto, Hiroshi Terada, Iriya Muneta, Motoichi Ohtsu, Masaaki Tanaka, and Shinobu Ohya, “Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements”, Phys. Rev. B 93, pp.241303(R)/1-4 (2016). DOI: 10.1103/PhysRevB.00.001300
  6. Iriya Muneta, Shinobu Ohya, Hiroshi Terada and Masaaki Tanaka, “Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor”, Nature Communications 7, 12013 (2016). Doi: 10.1038/ncomms12013
  7. L. D. Anh, P. N. Hai, M. Tanaka, “Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor”. Nature Communications 7, 13810(2016).

2015

  1. Atsushi Ishikawa, Tomohiro Amemiya, Yuya Shoji, Pham Nam Hai, Masaaki Tanaka, Tetsuya Mizumoto, Shigehisa Arai, Takuo Tanaka, “Optical and Magnetic Microstructures in YIG Ferrite Fabricated by Femtosecond Laser”, Journal of Laser Micro/Nanoengineering, Vol. 10, No. 1, pp. 48-52, (Feb. 2015).
  2. Ryosho Nakane, Satoshi Sugahara, and Masaaki Tanaka, “Structural and magnetic properties of ferromagnetic Fe1-xSix (0.18http://dx.doi.org/10.1063/1.4915335
  3. Hiroshi Terada, Shinobu Ohya, and Masaaki Tanaka, “Intrinsic magneto-optical spectra of GaMnAs”, Appl. Phys. Lett. 106, pp.222406/1-4 (2015). Doi: 10.1063/1.4922218
  4. Shoichi Sato, Ryosho Nakane, and Masaaki Tanaka, “Origin of the broad three-terminal Hanle signals in Fe/SiO2/Si tunnel junctions” , Appl. Phys. Lett. 107, pp.032407/1-5 (2015). Doi: 10.1063/1.4926969
  5. Pham Nam Hai and Masaaki Tanaka, “Memristive magnetic tunnel junctions with MnAs nanoparticles”, Appl. Phys. Lett. 107, pp.122404/1-5 (2015). Doi: 10.1063/1.4931141
  6. Le Duc Anh, Pham Nam Hai, Yuichi Kasahara, Yoshihiro Iwasa, and Masaaki Tanaka, “Modulation of ferromagnetism in (In,Fe)As quantum wells via electrically controlled deformation of the electron wavefunctions”, Phys. Rev. B92, pp.161201/1-5(R) (2015). Doi: 10.1103/PhysRevB.92.161201, arXiv 1503.02174 (March 7, 2015) (URL:http://arxiv.org/abs/1503.02174)
  7. Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka, “Magnetic properties and intrinsic ferromagnetism in (Ga,Fe)Sb ferromagnetic semiconductors”, Phys. Rev. B92, pp.144403/1-14 (2015). Doi: 10.1103/PhysRevB.92.144403
  8. T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S. Kuroda, M. Tanaka, Pham Nam Hai, H. Katayama-Yoshida, “Spinodal nanodecomposition in semiconductors doped with transition metals”, Reviews of Modern Physics 87, pp.1311-1377 (2015). DOI: 10.1103/RevModPhys.87.1311, arXiv 1412.8062 (December 31, 2014), http://arxiv.org/pdf/1412.8062v2.pdf
  9. Le Duc Anh, Daiki Kaneko, Pham Nam Hai, and Masaaki Tanaka, “Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb”, Appl. Phys. Lett. 107, pp.232405/1-4(2015). DOI: 10.1063/1.4937142
  10. Toshiki Kanaki, Hirokatsu Asahara, Shinobu Ohya, and Masaaki Tanaka, “Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure” , Appl. Phys. Lett. 107, pp.242401/1-4 (2015). Doi: 10.1063/1.4937437

2014

  1. Masaaki Tanaka, Shinobu Ohya, and Pham Nam Hai (invited) , “Recent progress in III-V based ferromagnetic semiconductors: Band structure, fermi level, and tunneling transport”, Applied Physics Reviews, Vol.1, pp.011102/1-26 (2014). DOI: 10.1063/1.4840136, http://dx.doi.org/10.1063/1.4840136 arXiv: 1311.6616 (URL: http://arxiv.org/abs/1311.6616
  2. Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka, “Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells”, Appl. Phys. Lett. 104, pp.042404/1-5 (2014). DOI: 10.1063/1.4863214, arXiv:1309.5283
  3. T. Amemiya, A. Ishikawa, Y. Shoji, P. N. Hai, M. Tanaka, T. Mizumoto, T. Tanaka, and S. Arai, “Three-dimensional nanostructuring in YIG ferrite with femtosecond laser” , Optics Letters 39, pp. 212-215 (2014). DOI: 10.1364/OL.39.000212, URL: http://dx.doi.org/10.1364/OL.39.000212
  4. M. Kobayashi, H. Niwa, Y. Takeda, A. Fujimori, Y. Senba, H. Ohashi, A.Tanaka, S. Ohya, P. N. Hai, M. Tanaka, Y. Harada, and M. Oshima, “Electronic Excitations of Magnetic Impurity State in Diluted Magnetic Semiconductor (Ga,Mn)As”, Phys. Rev. Lett. 112, 107203/1-4 (2014). DOI: 10.1103/PhysRevLett.112.107203
  5. Nguyen Thanh Tu, Le Duc Anh, Pham Nam Hai, Masaaki Tanaka, “Epitaxial Growth and Characterization of n-type Magnetic Semiconductor (In,Co)As”, Jpn. J. Appl. Phys. 53, pp.04EM05/1-5 (2014). URL: http://dx.doi.org/10.7567/JJAP.53.04EM05
  6. Pham Nam Hai, Daiki Maruo, and Masaaki Tanaka, “Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes”, Appl. Phys. Lett. 104, pp.122409/1-5 (2014). DOI: 10.1063/1.4869576
  7. Daisuke Sasaki, Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka, “Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films”, Appl. Phys. Lett. 104, pp.142406/1-5 (2014). DOI: 10.1063/1.487097
  8. Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda, Yoshihisa Harada, Atsushi Fujimori, Juraj Krempasky, Thorsten Schmitt, Shinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov, “Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As”, Phys. Rev. B 89, pp.205204/1-8 (2014). DOI: http://dx.doi.org/10.1103/PhysRevB.89.205204 arXiv:1302.0063v1 (on 1 Feb 2013)
  9. M. Kobayashi, L. D. Anh, P. N. Hai, Y. Takeda, S. Sakamoto, T. Kadono, T. Okane, Y. Saitoh, H. Yamagami, Y. Harada, M. Oshima, M. Tanaka, and A. Fujimori, “Spin and orbital magnetic moments of Fe in the n-type ferromagnetic semiconductor (In,Fe)As”, Appl. Phys. Lett. 105, pp.032403/1-4 (2014). Doi: 10.1063/1.4890733, arXiv: 1405.5130 (May 21, 2014).
  10. Yoshisuke Ban, Yuki Wakabayashi, Ryota Akiyama, Ryosho Nakane, and Masaaki Tanaka, “Transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping”, AIP Advances 4, pp.097108/1-8 (2014). Doi: 10.1063/1.4895109 arXiv: 1405.2764
  11. Pham Nam Hai, Takashi Yatsui, Motoichi Ohtsu, and Masaaki Tanaka, “High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer”, J. Appl. Phys., 116, pp.113905/1-6 (2014). Doi: 10.1063/1.4895700
  12. Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka, “(Ga,Fe)Sb: A p-type ferromagnetic semiconductor”, Appl. Phys. Lett. 105, pp.132402/1-4 (2014). Doi: 10.1063/1.4896539
  13. Yuki K. Wakabayashi, Yoshisuke Ban, Shinobu Ohya, and Masaaki Tanaka, “Important role of the non-uniform Fe distribution for the ferromagnetism in group-IV based ferromagnetic semiconductor GeFe”, J. Appl. Phys. 116, pp.173906/1-7 (2014). Doi: 10.1063/1.4901060, “Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties”, arXiv: 1406.2202
  14. Yuki K. Wakabayashi, Shinobu Ohya, Yoshisuke Ban, and Masaaki Tanaka, “Annealing-induced enhancement of ferromagnetism and nanoparticle formation in the ferromagnetic semiconductor GeFe”, Phys. Rev. B90, pp.205209/1-7 (2014). DOI: 10.1103/PhysRevB.90.205209, arXiv: 1402.7209
  15. R. Nakane, Y. Shuto, H. Sukegawa, Z.C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara, “Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip”, Solid State Electronics, 102, pp.52-58 (2014).

2013

  1. Iriya Muneta, Hiroshi Terada, Shinobu Ohya, and Masaaki Tanaka, “Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism”, Appl. Phys. Lett. 103, pp.032411/1-4 (2013). DOI: 10.1063/1.4816133

2012

  1. Ryota Akiyama, Shinobu Ohya, Pham Nam Hai, and Masaaki Tanaka, “Magnetoresistance Induced by Spin-Dependent Inelastic Cotunneling in a Ferromagnetic MnAs Nanoparticle with Non-Magnetic Electrodes”, J. Appl. Phys. 111, 063716/1-5 (2012). DOI: 10.1063/1.3695990
  2. Ryota Akiyama, Shinobu Ohya, Pham Nam Hai, and Masaaki Tanaka, “Magnetoresistance Induced by Spin-Dependent Inelastic Cotunneling in a Ferromagnetic MnAs Nanoparticle with Non-Magnetic Electrodes”, Virtual Journal of Nanoscale Science & Technology, Volume 25, Issue 15, April 9, 2012. URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000025000015000116000001&idtype=cvips&gifs=yes&ref=no
  3. Iriya Muneta, Shinobu Ohya, and Masaaki Tanaka, “Spin-dependent tunneling transport in a ferromagnetic GaMnAs and un-doped GaAs double-quantum-well heterostructure”, Appl. Phys. Lett. 100, 162409/1-3 (2012). DOI: 10.1063/1.4704154 Virtual Journal of Nanoscale Science & Technology, Volume 25, Issue 18, April 30, 2012. URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000025000018000028000001&idtype=cvips&gifs=yes&ref=no
  4. Pham Nam Hai, Daisuke Sasaki, Le Duc Anh, Masaaki Tanaka, “Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor”, Appl. Phys. Lett. 100, pp.262409/1-5 (2012). DOI: 10.1063/1.4730955, arXiv:1202.5874v1 (submitted on February 27, 2012), URL: http://arxiv.org/abs/1202.5874
  5. Ryosho Nakane, Shoichi Sato, Shun Kokutani, and Masaaki Tanaka, “Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-based Multi-terminal Devices with Fe Electrodes”, IEEE Magnetics Lett. 3, 3000404/1-4 (2012). ISSN: 1949-307X, DOI: 10.1109/LMAG.2012.2201698
  6. Shinobu Ohya, Iriya Muneta, Yufei Xin, Kenta Takata, and Masaaki Tanaka, “Valence-band structure of quaternary alloy ferromagnetic semiconductor (InGaMn)As”, Phys. Rev. B86, pp.094418/1-8 (2012). DOI: 10.1103/PhysRevB.86.094418, arXiv:1208.2928. URL: http://arxiv.org/abs/1208.2928
  7. Pham Nam Hai, Le Duc Anh, Shyam Mohan, Tsuyoshi Tamegai, Masaya Kodzuka,Tadakatsu Ohkubo, Kazuhiro Hono, and Masaaki Tanaka, “Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As”, Appl. Phys. Lett. 101, pp.182403/1-5 (2012). DOI: 10.1063/1.4764947
  8. Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka, “Iron-based n-type electron-induced ferromagnetic semiconductor”, arXiv:1106.0561v1 (submitted on 3 June, 2011), arXiv:1106.0561v3 (submitted on 4 October, 2011), URL:http://arxiv.org/abs/1106.0561v3
  9. Pham Nam Hai, Wataru Nomura, Takashi Yatsui, Motoichi Ohtsu, and Masaaki Tanaka, “Effects of laser irradiation on the self-assembly of MnAs nanoparticles in a GaAs matrix”, Appl. Phys. Lett. 101, pp.193102/1-4 (2012). DOI: 10.1063/1.4765355
  10. M. Kobayashi, I. Muneta, T. Schmitt, L. Patthey, S. Ohya, M. Tanaka, M. Oshima, and V. N. Strocov, “Digging up Bulk Band Dispersions Buried under a Passivation Layer”, Appl. Phys. Lett., 101, pp.242103/1-4 (2012). DOI: 10.1063/1.4770289, URL: http://arxiv.org/pdf/1208.5767v1
  11. Pham Nam Hai, Le Duc Anh, and Masaaki Tanaka, “Electron effective mass in n-type electron-induced ferromagnetic semiconductor (In,Fe)As: Evidence of conduction band transport”, Appl. Phys. Lett. 101, pp.252410/1-5 (2012). DOI: 10.1063/1.4772630

2011

  1. Shinobu Ohya, Kenta Takata, and Masaaki Tanaka, “Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs”, Nature Physics 7, pp.342-347 (2011). DOI: 10.1038/NPHYS1905 cond-mat arXiv:1009.2235. URL: http://www.nature.com/nphys/journal/vaop/ncurrent/full/nphys1905.html
  2. S. Ohya, K. Takata, and M. Tanaka, “Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs”, Virtual Journal of Nanoscale Science & Technology, Volume 23, Issue 15. April 18, 2011. URL: http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=23&Issue=15&type=ALERT
  3. Shinobu Ohya, Kenta Takata, Iriya Muneta, Pham Nam Hai, and Masaak Tanaka, “Comment on “Reconciling results of tunnelling experiments on (Ga,Mn)As” arXiv:1102.3267v2 by Dietl and Sztenkiel”, cond-mat arXiv:1102.4459v3 URL: http://arxiv.org/abs/1102.4459v3
  4. Pham Nam Hai, Shinsuke Yada and Masaaki Tanaka, “Phase decomposition diagram of magnetic alloy semiconductor”, J. Appl. Phys. 109, pp.073919/1-9 (2011). DOI: 10.1063/1.3567112
  5. Shinsuke Yada, Pham Nam Hai, Satoshi Sugahara, and Masaaki Tanaka, “Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates”, J. Appl. Phys. 110, pp.073903/1-8 (2011). DOI: 10.1063/1.3638701

2010

  1. Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka “GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier” Virtual Journal of Nanoscale Science & Technology 21,No.1,(2010). http://www.vjnano.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000021000001000033000001&idtype=cvips&gifs=Yes&ref=no
  2. Yusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu’ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, and Satoshi Sugahara “A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET” Applied Physics Express 3, pp.013003/1-3 (2010). http://arxiv.org/abs/0912.0835 (Dec 2009).
  3. Shinobu Ohya, Iriya Muneta, and Masaaki Tanaka “Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers” Appl. Phys. Lett. 96, 052505/1-3 (2010).
  4. Shinobu Ohya, Iriya Muneta, and Masaaki Tanaka “Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers” Virtual Journal of Nanoscale Science & Technology, Volume 21, Issue 7, February 15, 2010. http://www.vjnano.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000021000007000024000001&idtype=cvips&gifs=Yes&ref=no
  5. Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka “Valence-Band Structure of the Ferromagnetic Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy” Phys. Rev. Lett. 104, 167204 (2010).
  6. Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka “Valence-Band Structure of Ferromagnetic-Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy” Virtual Journal of Nanoscale Science & Technology, Volume 21, Issue 18, May 3, 2010. http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000021000018000024000001&idtype=cvips&gifs=yes&ref=no
  7. Pham Nam Hai, Shinobu Ohya, and Masaaki Tanaka “Long spin-relaxation time in a single metal nanoparticle” Nature Nanotechnology 5, pp.593-596 (2010). published online on July 4, 2010. (DOI 10.1038/NNANO.2010.130.)
  8. R. Nakane, T. Harada, K. Sugiura, S. Sugahara, and M. Tanaka “Spin-dependent transport of spin MOSFETs with ferromagnetic MnAs source and drain contacts: Spin injection and transport in a Si MOS channel” Jpn. J. Appl. Phys. 49, pp.113001/1-3 (2010). cond-mat arXiv:1002.0057
  9. Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya, and Masaaki Tanaka “Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge (111)” Applied Physics Express 3, pp.123002/1-3 (2010).

2009

  1. M. Yokoyama, S. Ohya, and M. Tanaka “Strong In-plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect” Jpn. J. Appl. Phys. 48, 023001/1-4 (2009).
  2. M. Tanaka, M. Yokoyama, P-N. Hai, and S. Ohya (Invited review paper) “Properties and functionalities of MnAs/III-V hybrid and composite structures” in Spintronics, Semiconductors and Semimetals, Vol. 82, edited by T. Dietl, D. D. Awschalom, M. Kaminska, and H. Ohno (Academic Press, New York, November 2008). 500 pages, ISBN-13: 978-0-08-044956-2, ISBN-10: 0-08-044956-5
  3. Pham Nam Hai, Shinobu Ohya, Masaaki Tanaka, Stewart E.Barnes, Sadamichi Maekawa “Electromotive force and huge magnetoresistance in magnetic tunnel junctions” Nature 458, pp.489-492 (2009). Online published on March 8, 2009, doi: 10.1038/nature07879 http://www.nature.com/nature/journal/vaop/ncurrent/abs/nature07879.html
  4. S. Nakagawa, M. Yokoyama, O. Ichikawa, M. Hata, M. Tanaka, M. Takenaka, S. Takagi “Investigation of InAlAs oxide/InP metal-oxide-semiconductor structures formed by wet thermal oxidation” Jpn. J. Appl. Phys. 48, 04C093/1-4 (2009).
  5. Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka “GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier” Appl. Phys. Lett. 95, 242503/1-3 (2009). http://arxiv.org/abs/0912.3045 (Dec 2009).

2008

  1. A.M. Nazmul, H.T. Lin, S.N. Tran, S. Ohya, and M. Tanaka, “Planar Hall effect and uniaxial in-plane magnetic anisotropy in a Mn delta-doped GaAs/p-AlGaAs heterostructure” Phys. Rev. B77, pp.155203/1-8 (2008).
  2. A.M. Nazmul, H.T. Lin, S.N. Tran, S. Ohya, and M. Tanaka, “Planar Hall effect and uniaxial in-plane magnetic anisotropy in a Mn delta-doped GaAs/p-AlGaAs heterostructure” Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 15, April 14, 2008. http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=CURVOL&Issue=CURISS
  3. Y. Takeda, M. Kobayashi, T. Okane, T. Ohkochi, J. Okamoto, Y. Saitoh, K. Kobayashi, H. Yamagami, A. Fujimori, A. Tanaka, J. Okabayashi, M. Oshima, S. Ohya, P.N. Hai, M. Tanaka “Nature of magnetic coupling between Mn ions in as-grown Ga1-xMnxAs studied by x-ray magnetic circular dichroism” Phys. Rev. Lett. 100, 247202 (2008).
  4. Pham Nam Hai, Yusuke Sakata, Masafumi Yokoyama, Shinobu Ohya, and Masaaki Tanaka “Spin valve effect by ballistic transport in ferromagnetic metal(MnAs) / semiconductor (GaAs) hybrid heterostructures” Phys. Rev. B 77, 214435/1-6 (2008). http://arxiv.org/abs/0708.1681
  5. M. Yokoyama, S. Ohya, and M. Tanaka “Magnetic Anisotropy of Ferromagnetic Semiconductor [(InyGa1-y)1-xMnx]As Thin Films” physica status solidi (c) 5, pp.2901-2903 (2008).
  6. A. M. Nazmul, H. T. Lin, S. Ohya, and M. Tanaka “Planar Hall Effect and Magnetic Anisotropy in a Mn delta-doped GaAs/p-AlGaAs Heterostructure” IEEJ Transactions on Electrical and Electronic Engineering, 3, pp.394-398 (2008).
  7. Y. Shuto, M. Tanaka, and S. Sugahara “Epitaxial growth of ferromagnetic semiconductor Ge1-xFex thin films on Si(001) substrates” Jpn. J. Appl. Phys. 47, pp.7108-7112 (2008).
  8. S. Yada, M. Tanaka,and S. Sugahara “Magneto-optical and magneto-transport properties of amorphous ferromagnetic semiconductor Ge1-xMnx thin films” Appl. Phys. Lett. 93,193108/1-3 (2008).

2007

  1. T. Amemiya, H. Shimizu, P. N. Hai, M. Yokoyama, M. Tanaka, and Y. Nakano “Waveguide-based 1.5-micron optical isolator based on magneto-optical characterizations of ferromagnetic MnAs”, Jpn. J. Appl. Phys. 46, pp.205-210 (2007).
  2. S. Ohya, K. Ohno, and M. Tanaka, “Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs” Appl. Phys. Lett. 90, pp.112503/1-3 (2007). cond-mat/0612055
  3. P. N. Hai, K. Takahashi, M. Yokoyama, S. Ohya, and M. Tanaka “Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix” J. Magn. Magn. Mater. 310, pp.1932-1934 (2007).
  4. T. Amemiya, H. Shimizu, P. N. Hai, M. Yokoyama, M. Tanaka, and Y. Nakano “Nonreciprocal propagation of light without external magnetic fields in a semiconductor waveguide isolator” J. Magn. Magn. Mater. 310, pp.2161-2163 (2007).
  5. K. Sugiura, R. Nakane, S. Sugahara, and M. Tanaka “Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Postgrowth annealing and transport characteristics” J. Crystal Growth 301/302, pp.611-614 (2007).
  6. M. Yokoyama, S. Ohya, and M. Tanaka “Molecular beam epitaxy growth and properties of MnAs thin films epitaxially grown on InP(001)” J. Crystal Growth 301/302, pp.615-618 (2007).
  7. M. Yokoyama, S. Ohya, and M. Tanaka “Fabrication, magnetic properties, and device application of InAlAs:MnAs granular material” J. Crystal Growth 301/302, pp.627-630 (2007).
  8. Y. Shuto, M. Tanaka, and S. Sugahara “Structural and magnetic properties of epitaxially grown Ge1-xFex thin films: Fe concentration dependence” Appl. Phys. Lett. 90, pp.132512/1-3 (2007).
  9. Y. Mizuno, S. Ohya, P-N. Hai, and M. Tanaka “Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors” Appl. Phys. Lett. 90, pp.162505/1-3 (2007). cond-mat/0702239
  10. Y. Mizuno, S. Ohya, P-N. Hai, and M. Tanaka “Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors” Virtual Journal of Nanoscale Science & Technology Volume 15, Issue 17, April 30, 2007. http://www.vjnano.org/nano/
  11. S. Ohya, P. N. Hai, Y. Mizuno, and M. Tanaka, “Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures” Phys. Rev. B75, pp.155328/1-6 (2007).
  12. S. Ohya, P. N. Hai, Y. Mizuno, and M. Tanaka, “Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures” Virtual Journal of Nanoscale Science & Technology Volume 15, Issue 18, May 7, 2007. http://www.vjnano.org/nano/
  13. M. Tanaka and S. Sugahara “Metal-Oxide-Semiconductor Based Spin Devices for Reconfigurable Logic” Invited paper in the Special Issue on Spintronics, IEEE Transactions on Electron Devices Vol. 54, No.5, pp.961-976 (2007).
  14. S. Ohya and M. Tanaka (Invited review) “TMR in Semiconductors” Handbook of Magnetism and Advanced Magnetic Materials, Vol. 5 Spintronics and Magnetoelectronics edited by Helmut Kronmuller and Stuart Parkin, John Wiley & Sons Ltd. (Chichester, UK), 3064 pages, July 2007. Handbook of Magnetism and Advanced Magnetic Materials, 5 Volume-Set. ISBN : 0470022175or_9780470022177
  15. R. Nakane, J. Kondo, and M. Tanaka “Tunneling magnetoresistance in a Mn delta-doped GaAs / AlAs / MnAs heterostructure” Jpn. J. Appl. Phys. 46, pp.L755 – L757 (2007).
  16. K. Ohno, S. Ohya, and M. Tanaka “Properties of heavily Mn-doped GaMnAs with Curie temperature of 172.5 K” Journal of Superconductivity and Novel Magnetism 20, pp.417-420 (2007).
  17. T. Amemiya, H. Shimizu, M. Yokoyama, P. N. Hai, M. Tanaka, and Y. Nakano “1.54-μm TM-mode waveguide optical isolator based on nonreciprocal-loss phenomenon: device design to reduce insertion loss” Applied Optics 46, pp.5784-5791 (2007).
  18. Pham Nam Hai, S. Sugahara and M. Tanaka “Reconfigurable Logic Gates Using Single Electron Spin Transistors” Jpn. J. Appl. Phys. 46, pp.6579-6585 (2007). http://arxiv.org/abs/0707.1922

2006

  1. M. Yokoyama, S. Ohya, and M. Tanaka, “Growth and magnetic properties of epitaxial MnAs thin films grown on InP (001)”, Appl. Phys. Lett. 88, 012504 (2006).
  2. M. Yokoyama, T. Ogawa, A.M. Nazmul, and M. Tanaka, “Large magnetoresistance (> 600%) of a GaAs:MnAs granular thin film at room temperature”, J. Appl. Phys. 99, 08D502 (2006).
  3. Y. Shuto, M. Tanaka, and S. Sugahara, “Magneto-optical properties of a new group IV ferromagnetic semiconductor Ge1-xFex grown by molecular beam epitaxy”, J. Appl. Phys. 99, 08D516 (2006). cond-mat/0511328
  4. P.N. Hai, M. Yokoyama, S. Ohya, and M. Tanaka, “Spin polarized tunneling in III-V based heterostructures with a ferromagnetic MnAs thin film and GaAs:MnAs nanoclusters”, Physica E32, pp.416-418 (2006).
  5. T. Amemiya, H. Shimizu, Y. Nakano, P. N. Hai, M. Yokoyama, and M. Tanaka , “Semiconductor waveguide optical isolator based on nonreciprocal loss induced by ferromagnetic MnAs”, Appl. Phys. Lett. 89, 021104 (2006).
  6. S. Sugahara and M. Tanaka, “Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) and their integrated circuit applications”, ACM Transactions on Storage, Vol.2, No.2, pp.197-219 (2006).
  7. K. Sugiura, R. Nakane, S. Sugahara, and M. Tanaka, “Schottky barrier height of ferromagnet/Si(001) junctions”, Appl. Phys. Lett. 89, 072110/1-3 (2006).
  8. R. Nakane, M. Tanaka, and S. Sugahara, “Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications”, Appl. Phys. Lett. 89, pp.192503/1-3 (2006).
  9. Pham Nam Hai, M. Yokoyama, S. Ohya, and M. Tanaka, “Tunneling magnetoresistance of MnAs thin film / GaAs / AlAs / GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence”, Appl. Phys. Lett. 89, 242106 (2006).
  10. S. Ohya, K. Ohno, and M. Tanaka, “Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs” cond-mat/0612055
  11. Pham Nam Hai, M. Yokoyama, S. Ohya, and M. Tanaka, “Tunneling magnetoresistance of MnAs thin film / GaAs / AlAs / GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence”, Virtual Journal of Nanoscale Science & Technology, Volume 14, Issue 26 (2006).
  12. S. Ohya, P. N. Hai, Y. Mizuno, and M. Tanaka, “Quantum-size effect and tunneling magnetoresistance in GaMnAs quantum-well heterostructures”physica status solidi (c) 3, pp.4184-4187 (2006).
  13. Y. Shuto, M. Tanaka, and S. Sugahara, “Structural and magnetic properties of ferromagnetic semiconductor Ge1-xFex thin films grown by LT-MBE”physica status solidi (c) 3, pp.4110-4114 (2006).

2005

  1. K. Eguchi, Y. Tanabe, T. Ogawa, M. Tanaka, Y. Kawabe, and E. Hanamura, “Second-harmonic generation from pyroelectric and ferrimagnetic GaFeO3”, J. Optical Society of America B22, pp.128-137 (2005).
  2. A. Fujimori, J. Okabayashi, Y. Takeda, T. Mizokawa, J. Okamoto, K. Mamiya, Y. Saitoh, Y. Muramatsu, M. Oshima, S. Ohya, and M. Tanaka, “Photoemission and Core-Level Magnetic Circular Dichroism Studies of Diluted Magnetic Semiconductors”, J. Electron Spectroscopy and Related Phenomena 144-147, 701-705 (2005).
  3. M. Tanaka , “Spintronics: Recent Progress and Tomorrow’s Challenges”, J. Crystal Growth 278, pp.25-37 (2005).
  4. R. Nakane, J. Kondo, M. W. Yuan, S. Sugahara, and M. Tanaka, “Growth and magnetic properties of epitaxial metallic MnAs/NiAs/MnAs heterostructures grown on exact GaAs(111)B substrates”, J. Crystal Growth 278, pp.649-654 (2005).
  5. S. Sugahara and M. Tanaka, “A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) using a ferromagnetic semiconductor for the channel”, J. Appl. Phys. 97, 10D503 (2005).
  6. M. Yokoyama, H. Yamaguchi, T. Ogawa, and M. Tanaka, “Zinc-Blende-type MnAs nanoclusters embedded in GaAs”, J. Appl. Phys. 97, 10D317 (2005) .
  7. A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, “High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping”, Phys. Rev. Lett. 95, pp.17201 1-4 (2005).
  8. A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, “High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping”, cond-mat/0503444 (2005 March); Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 2, July 11, 2005. http://www.vjnano.org.
  9. S. Ohya, P-N. Hai, and M. Tanaka, “Tunneling magnetoresistance in GaMnAs / AlAs / InGaAs / AlAs / GaMnAs double-barrier magnetic tunnel junctions”, Appl. Phys. Lett. 87, 012105 (2005).
  10. S. Ohya, P-N. Hai, and M. Tanaka, “Tunneling magnetoresistance in GaMnAs / AlAs / InGaAs / AlAs / GaMnAs double-barrier magnetic tunnel junctions”, Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 2, July 11, 2005. http://www.vjnano.org.
  11. S. Sugahara, K.L. Lee, S. Yada, and M. Tanaka, “Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film”, Jpn. J. Appl. Phys. (Express Letter) Vol.44, pp.L1426 – L1429 (2005).

2004

  1. A. M. Nazmul, S. Kobayashi, S. Sugahara and M. Tanaka, “Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (~100 K)”, Jpn. J. Appl. Phys. 43, pp.L233 – L236 (2004).
  2. 田中雅明、アーサ ン M. ナズムル、菅原聡「MnデルタドープGaAsを含む強磁性半導体ヘテロ構造:Tcの上昇と磁性制御」日本応用磁気学会誌 Vol. 28 No.2, pp. 66-71 (2004).
  3. S. Sugahara and M. Tanaka, “A Spin-Filter Transistor and Its Applications”, Physica E21, pp.996-1001 (2004).
  4. M. Nazmul, S. Kobayashi, S. Sugahara, and M. Tanaka, “Control of Ferromagnetism in Mn Delta-doped GaAs-based Heterostructures”, Physica E21, pp.937-942 (2004).
  5. T. Ogawa, Y. Shuto, K. Ueda, and M. Tanaka, “Photo-induced anomalous Hall effect in GaAs:MnAs granular films”, Physica E21, pp.1041-1045 (2004).
  6. S. Ohya, H. Kobayashi, and M. Tanaka, “Magnetic Properties and Curie Temperature (~130K) of Heavily Mn-doped Quaternary Alloy Ferromagnetic Semiconductor (InGaMn)As Grown on InP”, Physica E21, pp.975-977 (2004).
  7. R. Nakane, S. Sugahara, and M. Tanaka, Epitaxial growth and magnetic properties of MnAs/NiAs/MnAs spin-valve trilayers on GaAs(001) substrates”, Physica E21, pp.991-995 (2004).
  8. O. Rader, C. Pampuch, A. M. Shikin, W. Gudat, J. Okabayashi, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka, A. Tanaka, A. Kimura, “Resonant photoemission of Ga1-xMnxAs at the Mn L edge”, Phys. Rev. B69, pp. 075202/1-7 (2004).
  9. S. Sugahara and M. Tanaka, “A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain”, Appl. Phys. Lett. 84, pp.2307-2309 (2004).
  10. S. Sugahara and M. Tanaka, “A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain”, Virtual Journal of Nanoscale Science & Technology, Volume 9, Issue 13, April 5, 2004.
  11. R. Nakane, S. Sugahara and M. Tanaka, “The effect of post-growth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates”, J. Appl. Phys. 95, pp.6558-6561 (2004)..
  12. S. Sugahara and M. Tanaka, “Spin-filter transistor”, Jpn. J. Appl. Phys. 43, L838-L841 (2004).
  13. T. Matsuno, S. Sugahara and M. Tanaka, “Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors”, Jpn. J. Appl. Phys.,43, 6032-6037 (2004).

2003

  1. 上田和彦、清水大 雅、田中雅明 “GaAs/AlAs DBRとMnAsナノクラスターを含む半導体積層構造の設計及び磁気光学物性” 日本応用磁気学会誌 27, pp.273-276 (2003).
  2. H. Shimizu and M. Tanaka, “Design of semiconductor-waveguide-type optical isolators using the non-reciprocal loss/gain in the magneto-optical waveguides having MnAs nanoclusters”, Virtual Journal of Nanoscale Science & Technology, January 6, 2003; http://www.vjnano.org/
  3. G. Mahieu, P. Condette, B. Grandidier, J.P. Nys, G. Allan, D. Stievenard, Ph. Evert, H. Shimizu and M. Tanaka, “Compensation Mechanisms in Low-temperature Grown GaMnAs Investigated by Scanning Tunneling Microscopy”, Appl. Phys. Lett. 82, pp.712-714 (2003).
  4. S. Sugahara and M. Tanaka, “Epitaxial Growth and Magnetic Properties of MnAs/AlAs/MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: the Effect of a Ultrathin GaAs Buffer Layer”, J. Cryst. Growth 251, pp.317-322 (2003).
  5. M. Nazmul, S. Sugahara, and M. Tanaka, “Structural and Transport Properties of Mn-delta-doped GaAs”, J. Cryst. Growth 251, pp.303-310 (2003).
  6. M. Tanaka <Invited paper>, “Spin-polarized Tunneling in Fully Epitaxial Semiconductor-based Magnetic Tunnel Junctions”, Journal of Superconductivity; Incorporating Novel Magnetism 16, pp.241-248 (2003).
  7. S. Ohya, H. Yamaguchi, and M. Tanaka, “Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP”, Journal of Superconductivity; Incorporating Novel Magnetism 16, pp.139-142 (2003).
  8. A.M. Nazmul, S. Sugahara, and M. Tanaka, “Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping”, Phys. Rev. B67, pp.241308(R) 1-4 (2003).
  9. A.M. Nazmul, S. Sugahara, and M. Tanaka, “Transport Properties and High Curie Temperature (172 K) of Mn-delta-doped GaAs with Selective p-type Doping”, Proc. of 26th International Conference on the Physics of Semiconductors (ICPS-26), paper E4.2, Edinburgh UK, July 29 – August 2, 2002.
  10. K. Ueda, H. Shimizu, and M. Tanaka, “Magneto-Optical Kerr Effect of Semiconductor-based Multilayer Structures Containing a GaAs:MnAs Granular Thin Film”, Jpn. J. Appl. Phys. 42, L914-L917 (2003).
  11. S. Ohya, H. Kobayashi, and M. Tanaka, “Magnetic properties of heavily Mn-doped quaternary alloy magnetic semiconductor (InGaMn)As grown on InP”, Appl. Phys. Lett. 83, pp.2175-2177 (2003).
  12. J. Okabayashi, M. Mizuguchi, M. Oshima, H. Shimizu, M. Tanaka, M. Yuri, and C.T. Chen, “Electronic and magnetic properties of MnAs nanoclusters studied by x-ray absorption spectroscopy and x-ray magnetic circular dichroism”, Appl. Phys. Lett. 83, pp.5485-5487 (2003).

2002

  1. 清水大雅、田中雅明 ”III-V族半導体中に形成されたMnAsナノクラスター構造の磁気光学効果と半導体導波路型光アイソレータへの応用” 電気学会マグネティックス研究会 MAG-02-30, pp.11-15 (2002).
  2. A. M. Nazmul, S. Sugahara, and M. Tanaka, “Properties of Mn-delta-doped-GaAs-based Heterostructures and Their High Ferromagnetic Transition Temperature (〜172 K)”, The papers of Technical Meeting on Magnetics, IEE Japan, MAG-02-31, pp.17-21, Research Institute of Electrical Communications, Tohoku University, March 14-15, 2002.
  3. M. Tanaka, <Invited paper> “Semiconductor-Based Magnetic Heterostructures for Spin Electronics”, Proc. of the 2002 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2002), pp.271-276, paper ED2002-172, SDM2002-122, Sapporo, Japan, July 2002.
  4. S. Sugahara and M. Tanaka, “Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates”, Appl. Phys. Lett. 80, pp.1969-1971 (2002).
  5. A.M. Nazmul, S. Sugahara, and M. Tanaka, “Transport Properties of Mn delta-doped GaAs and the effect of selective doping”, Appl. Phys. Lett. 80, pp.3120-3122 (2002).
  6. M. Tanaka <Invited paper>, “Ferromagnet (MnAs) / III-V Semiconductor Hybrid Structures”, Special Issue on Semiconductor Spintronics, Semiconductor Science and Technology 17, No.4, pp. 327-341 (2002).
  7. H. Shimizu and M. Tanaka, “Quantum size effect and ferromagnetic ordering in ultrathin GaMnAs/AlAs heterostructures”, J. Appl. Phys. 91, pp.7487-7489 (2002).
  8. M. Tanaka and Y. Higo <Invited paper>, “Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures”, Physica E13, pp.495-503 (2002).
  9. S. Sugahara and M. Tanaka, “Growth Characteristics and Tunneling magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs (111)B Substrates”, Physica E13, pp.582-588 (2002).
  10. H. Shimizu and M. Tanaka, “Magneto-optical properties of a Si-doped GaAs:MnAs based magneto-photonic crystal operating at 1.55 micron”, Physica E13, pp.597-601 (2002).
  11. A. M. Nazmul, S. Sugahara, and M. Tanaka, “Transport Properties and High Curie Temperature (172 K) of Mn-delta-doped GaAs with Selective p-type Doping”, http://xxx.lanl.gov/pdf/cond-mat/0208299 (August 2002).
  12. H. Shimizu and M. Tanaka, “Design of semiconductor-waveguide-type optical isolators using the non-reciprocal loss/gain in the magneto-optical waveguides having MnAs nanoclusters”, Appl. Phys. Lett. 81, pp.5246-5248 (2002).

2001

  1. 清水大雅、宮村 信、田中雅明 “MnAsナ ノクラスターとGaAs/AlAs半導体DBRからなる多層膜における磁気光学効果の増大” 日本応用磁気学会誌 Vol.25 No.4-2, pp.655-658 (2001).
  2. H. Shimizu, M. Miyamura, and M. Tanaka, “Magneto-optical Properties of a GaAs:MnAs Hybrid Structure Sandwiched by GaAs/AlAs Distributed Bragg Reflectors: Enhanced Magneto-optical Effect and Theoretical Analysis”, Appl. Phys. Lett. 78, pp.1523-1525 (2001).
  3. Y. Higo, H. Shimizu, and M. Tanaka, “Anisotropic Tunneling Magnetoresistance in GaMnAs/AlAs/GaMnAs Ferromagnetic Semiconductor Tunnel Junctions”, J. Appl. Phys. 89, pp. 6745-6747 (2001).
  4. H. Shimizu and M. Tanaka, “Magneto-Optical Properties of Semiconductor-Based Superlattices having GaAs with MnAs Nanoclusters”, J. Appl. Phys. 89, pp. 7281-7283 (2001).
  5. S. Sugahara and M. Tanaka, “Atomic-Scale Surface Morphology of Epitaxial Ferromagnetic MnAs Thin Films on Vicinal GaAs(111)B Substrates”, J. Appl. Phys. 89, pp. 6677-6679 (2001).
  6. H. Saito, W. Zaets, Y. Mishima, M. Tanaka, R. Akimoto and K. Ando, “Magnetic and transport properties of a new III-V diluted magnetic semiconductor Ga1-xCrxAs”, J. Appl. Phys. 89, pp.7392-7394 (2001).
  7. Y. Higo, H. Shimizu, and M. Tanaka, “Large Tunneling Magnetoresistance (>70%) in GaMnAs/AlAs/GaMnAs Single-barrier Ferromagnetic Semiconductor Tunnel Junctions”, Physica E10, pp.292-294 (2001).
  8. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka, “Electronic Structure of GaMnAs Studied by Angle-resolved Photoemission Spectroscopy”, Physica E10, pp.192-195 (2001).
  9. H. Shimizu, M. Miyamura, and M. Tanaka, “Magneto-optical effect in a Semiconductor-based Magnetic Microcavity”, Proc. of the 25th International Conference on the Physics of Semiconductors, Osaka 2000 (Eds. N. Miura and T. Ando, Springer), pp.1711-1712 (2001).
  10. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka, “Electronic structure of Ga1-xMnxAs studied by photoemission spectroscopy”, Proc. of the 25th International Conference on the Physics of Semiconductors, Osaka 2000 (Eds. N. Miura and T. Ando, Springer), pp.262-263 (2001).
  11. M. Tanaka, H. Shimizu, and M. Miyamura <Invited paper>, “Enhancement of Magneto-optical Effect in a GaAs:MnAs Hybrid Structure Sandwiched by GaAs/AlAs Distributed Bragg Reflectors: Epitaxial Semiconductor-based Magneto-photonic Crystal”, J. Cryst. Growth, 227/228, pp.839-846 (2001).
  12. M. Tanaka and K. Takahashi, “Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ferromagnet (MnAs) trilayer heterostructures: Epitaxial growth and magnetotransport properties”, J. Cryst. Growth, 227/228, pp.847-851 (2001).
  13. M. Tanaka and Y. Mishima, “Low Temperature Molecular Beam Epitaxy Growth and Properties of (Ga,Er)As”, J. Cryst. Growth, 227/228, pp.857-861 (2001).
  14. Ahsan M. Nazmul, A. G. Banshchikov, H. Shimizu, and M. Tanaka, “MBE growth process of ferromagnetic MnAs on Si(111) substrates”, J. Cryst. Growth, 227/228, pp.874-881 (2001).
  15. M. Tanaka and Y. Higo, “Large Tunneling Magnetoresistance in GaMnAs/AlAs/GaMnAs Ferromagnetic Semiconductor Tunnel Junctions”, Phys. Rev. Lett. 87, pp.026602/1-4 (2001).
  16. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi and M. Tanaka, “Angle-Resolved Photoemission Study of Ga1-xMnxAs”, Phys. Rev. B64, pp.125304/1-4 (2001).
  17. S. Ohya, H. Shimizu, Y. Higo, J. M. Sun and M. Tanaka, “Growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As”, Jpn. J. Appl. Phys. 41, L24-L27 (2002); http://arXiv.org/pdf/cond-mat/0111163 (2001).

1996 – 2000

  1. M. Tanaka, M. Tsuda, T. Nishinaga and C.J. Palmstrom, “Room Temperature Negative Differential Resistance in AlAs/ErAs/AlAs Heterostructures Grown on (001) GaAs”, Appl. Phys. Lett. 68, pp.84-86 (1996).
  2. S. Huang, Z.H. Ming, Y.L. Soo, Y.H. Kao, M. Tanaka, H. Munekata, “X-ray Scattering and Absorption Studies of MnAs/GaAs Heterostructures”, J. Appl. Phys. 79, pp.1435-1440 (1996).
  3. K. Akeura, M. Tanaka, T. Nishinaga, and J. De Boeck, “Epitaxial Growth and Magnetic Properties of MnAs Thin Films Directly Grown on Si (001)”, J. Appl. Phys. 79, pp.4957-4959 (1996).
  4. M.C. Park, Y. Park, T. Shin, G.M. Rothberg, M. Tanaka, J.P. Harbison, “Galvanomagnetic Properties and Magnetic Domain Structure of Epitaxial MnAs Thin Films on GaAs”, J. Appl. Phys. 79, pp.4967-4969 (1996).
  5. M. Tanaka, C.J. Palmstrom, M. Tsuda and T. Nishinaga, “Epitaxial Semimetal(ErAs)/Semiconductor(III-V) Heterostructures: Negative Differential Resistance in Novel Resonant Tunneling Structures Having a Semimetallic Quantum Well”, J. Magnetism & Magnetic Materials 156, pp.276-278 (1996).
  6. M. Tanaka, J.P. Harbison and G.M. Rothberg, “Epitaxial MnAs/NiAs Magnetic Multilayers on (001)GaAs Grown by Molecular Beam Epitaxy”, J. Magnetism & Magnetic Materials 156, pp.306-308 (1996).
  7. H.G. Ren, M. Tanaka, and T. Nishinaga, “Real Time Observation of Reconstruction Transitions on GaAs (111)B Surface by Scanning Electron Microscopy”, Appl. Phys. Lett. 69, pp.565-567 (1996).
  8. X.Q. Shen, H.W. Ren, M. Tanaka, T. Nishinaga, “Real-time Observations of Faceting and Shrinkage Processes of Disk-shaped Mesas in GaAs Molecular Beam Epitaxy on GaAs(111)B Substrates”, J. Cryst. Growth 169, pp.607-612 (1996).
  9. 田中雅明、林稔 晶、西永頌、島田宏、”III-V族希薄磁性半導体(GaMn)Asのエピタキシャル成長と伝導特性”、日本応用磁気学会誌 Vol. 21, pp.393-396 (1997).
  10. T. Shin, M.C. Park, Y. Park, G.M. Rothberg, J.P. Harbison, and M. Tanaka, “Magnetism of Epitaxial MnxNi1-xAs Films on GaAs(001)”, Appl. Phys. Lett. 70, pp.258-260 (1997).
  11. T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya and Y. Ootuka, “GaMnAs: New III-V Based Diluted Magnetic Semiconductor Grown by Molecular Beam Epitaxy”, J. Crystal Growth 175/176, pp.1063-1068 (1997).
  12. T. Hayashi, M. Tanaka, T. Nishinaga and H. Shimada, “Magnetic and Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs”, J. Appl. Phys. 81, pp.4865-4867 (1997).
  13. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, and K. Ando, “New III-V Based Magnetic(GaMnAs)/Nonmagnetic(AlAs) Semiconductor Superlattices”, Appl. Phys. Lett. 71, pp.1825-1827 (1997).
  14. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, H. Shimada, and K. Ando, “Hall Effect and Magnetic Properties of III-V Based (Ga1-xMnx)As/AlAs Magnetic Semiconductor Superlattices”, J. Appl. Phys. 83, pp.6551-6553 (1998).
  15. K. Ando, T. Hayashi, M. Tanaka, A. Twardowski, “Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga1-xMnxAs”, J. Appl. Phys. 83, pp.6548-6550 (1998).
  16. R. Shioda, K. Ando, T. Hayashi, M. Tanaka, “Local Structures of III-V Diluted Magnetic Semiconductor GaMnAs Studied by Extended X-ray Absorption Fine Structure”, Phys. Rev. B58, pp.1100-1102 (1998).
  17. M. Tanaka <Invited paper>, “Epitaxial Ferromagnetic Thin Films and Heterostructures of Mn-based Metallic and Semiconducting Compounds on GaAs”, Physica E2, pp.372-380 (1998).
  18. T. Hayashi, M. Tanaka, K. Seto, T. Nishinaga, and H. Shimada, “Magnetotransport Properties of New III-V Based Magnetic(GaMnAs)/Nonmagnetic(AlAs) Semiconductor Superlattices”, Physica E2, pp.404-407 (1998).
  19. M. Tanaka <Invited paper>, “Epitaxial Growth and Properties of III-V Based Ferromagnetic Semiconductor (GaMn)As and Its Heterostructures”, J. Vac. Sci. & Technol. B16, pp.2267-2274 (1998).
  20. J. Okabayashi, A. Kimura, A. Fujimori, T. Hayashi, and M. Tanaka, “Core-level Photoemission of (Ga1-xMnx)As”, Phys Rev. B58, pp.R4211-R4214 (1998).
  21. K. Shimada, O. Rader, A. Fujimori, A. Kimura, N. Kamakura, A. Kakizaki, K. Ono, M. Tanaka, M. Shirai, “Spin and Angle-Resolved Photoemission Spectroscopy of Ferromagnetic MnAs”, J. Electron Spectroscopy and Related Phenomena 88-91, pp.207-212 (1998).
  22. M. Nakamura, M. Shuzo, K. Ono, H. Fujioka, M. Tanaka, T. Nishinaga, Y. Watanabe, M. Oshima, “The Evidence for a Preferential Growth of a MnAs Thin Film on an As-Preadsorbed Si(001) Surface”, Applied Surface Science 130-132, pp.128-132 (1998).
  23. T. Shin, M.C. Park, Y. Park, G.M. Rothberg, M. Tanaka, J.P. Harbison, “Electric Field Effects on Magnetic and Optical Properties of MnAs/GaAs(001) Thin Films”, IEEE Transactions on Magnetics 34, pp.1042-1044 (1998).
  24. M. Tanaka, K. Saito, and T. Nishinaga, “Epitaxial MnAs/GaAs/MnAs Trilayer Magnetic Heterostructures”, Appl. Phys. Lett. 74, pp.64-66 (1999).
  25. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka, “Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn)As: Growth Condition Dependence”, Appl. Phys. Lett. 74, pp.398-400 (1999).
  26. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka, “Properties of III-V Based Ferromagnetic Semiconductor (Ga1-xMnx)As: As Pressure Dependence”, J. Magn. Soc. Jpn. 23, pp.96-98 (1999).
  27. K. Ono, T. Uragami, M. Mizuguchi, H. Fujioka, M. Oshima, M. Tanaka, H. Akinaga, Y. Watanabe, “Formation of Low-dimensional Structures of Manganese Pnictides”, J. Magn. Soc. Jpn. 23, pp.688-690 (1999).
  28. K. Ono, M. Mizuguchi, T. Uragami, T. Mano, H. Fujioka, M. Oshima, M. Tanaka, Y. Watanabe, “Formation of MnAs Dots on S-passivated GaAs(100) Substrates”, J. Magn. Soc. Jpn. 23, pp.691-693 (1999).
  29. T. Uragami, K. Ono, M. Mizuguchi, T. Mano, H. Fujioka, M. Oshima, M. Tanaka, Y. Watanabe, “Growth of MnAs on S and Se-passivated GaAs Substrates”, J. Magn. Soc. Jpn. 23, pp.694-696 (1999).
  30. J. Okabayashi, A. Kimura, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka, “Mn 3d Partial Density of States in (GaMn)As Studied by Resonance Photoemission Spectroscopy”, Phys Rev. B59, pp.R2486-R2489 (1999).
  31. M. Tanaka, K. Saito, M. Goto, T. Nishinaga, “Epitaxial Growth and Properties of MnAs/GaAs/MnAs Trilayer Heterostructures”, J. Magnetism & Magnetic Materials 198, pp. 719-721 (1999).
  32. M. Tanaka, K. Abe, K. Tamura, H. Haruyama, T. Nishinaga, “Vertical Transport in Epitaxial Semimetal(ErAs)/Semiconductor(III-V) Quantum Heterostructures”, J. Magnetism & Magnetic Materials 198, pp. 581-583 (1999).
  33. M. Tanaka <Invited paper>, “Ferromagnet/Semiconductor Hybrid Structures Grown by Molecular Beam Epitaxy”, J. Crystal Growth 201/202, pp.660-669 (1999).
  34. T. Hayashi, H. Shimada, H. Shimizu, and M. Tanaka, “Tunneling Spectroscopy and Magnetoresistance in (GaMn)As/AlAs/(GaMn)As Ultrathin Magnetic Semiconductor Heterostructures”, J. Crystal Growth, 201/202, pp.689-692 (1999).
  35. M. Oshima, K. Ono, M. Mizuguchi, T. Uragami, H. Fujioka, M. Tanaka, and Y. Watanabe, “Photoelectron Spectroscopy and Magnetic Properties of Manganese Pnictides Nanocrystals Formed on Passivated GaAs Substrates”, Jpn. J. Appl. Phys 38, Suppl.38-1, pp.373-376 (1999).
  36. K. Shimada, O. Rader, A. Fujimori, A. Kimura, K. Ono, N. Kamakura, A. Kakizaki, M. Tanaka, M. Shirai, “Spin-Resolved Core-Level and Valence-Band Photoemission Spectroscopy of Ferromagnetic MnAs”, J. Electron Spectroscopy and Related Phenomena 101-103, pp.383-387 (1999).
  37. J. Szczytko, A. Twardowski, K. Swiatek, M. Palczewska, T. Hayashi, M. Tanaka, and K. Ando, “Mn Impurity in (GaMn)As Epilayers”, Phys. Rev. B60, pp.8304-8308 (1999).
  38. K. Ando, A. Chiba, H. Tanoue, F. Kirino, and M. Tanaka, “Formation of Ferromagnetic Submicron Particles of MnAs and MnGa on GaAs Substrates by Ion Implantation”, IEEE Transactions on Magnetics 35, pp.3463-3465 (1999).
  39. T. Hayashi, M. Tanaka, and A. Asamitsu, “Tunneling Magnetoresistance of a (GaMn)As Based Double Barrier Ferromagnetic Tunnel Junction”, J. Appl. Phys. 87, pp.4673-4675 (2000).
  40. M. Nazmul, H. Shimizu and M. Tanaka, “Magneto-optical Spectra of Epitaxial Ferromagnetic MnAs films Grown on Si and GaAs Substrates”, J. Appl. Phys. 87, pp.6791-6793 (2000).
  41. K. Takahashi and M. Tanaka, “Magnetotransport Properties of MnAs/GaAs/MnAs Ferromagnet/Semiconductor Trilayer Heterostructures”, J. Appl. Phys. 87, pp.6695-6697 (2000).
  42. M. Tanaka and M. Koto, “Vertical Transport and Large Negative Differential Resistance of Epitaxial GaAs/ErAs/GaAs Buried Semimetal/Semiconductor Heterostructures”, Physica E7, pp.846-850 (2000).
  43. M. Tanaka, H. Shimizu, T. Hayashi, H. Shimada, and K. Ando <Invited paper>, “Ferromagnetic Semiconductor Heterostructures Based on (GaMn)As”, J. Vac. Sci. & Technol. A18, pp.1247-1253 (2000).
  44. H. Shimizu, M. Miyamura, and M. Tanaka, “Enhanced Magneto-Optical Effect in a GaAs:MnAs Nanoscale Hybrid Structure Combined with GaAs/AlAs Distributed Bragg Reflectors”, J. Vac. Sci. & Technol. B18, pp.2063-2065 (2000).
  45. B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, and M. Tanaka, “Atomic-Scale Study of GaMnAs/GaAs Layers”, Appl. Phys. Lett. 77, pp.4001-4003 (2000).

1991 – 1995

  1. M. Tanaka, T. Suzuki and T. Nishinaga, “Surface Diffusion of Al and Ga Atoms on GaAs (001) and (111)B Vicinal Surfaces in Molecular Beam Epitaxy”, J. Crystal Growth 111, 168 (1991).
  2. T. Noda, M. Tanaka and H. Sakaki, “Characterization of Correlation Length of Interface Roughness in MBE-Grown GaAs-AlAs Quantum Wells Studied by Mobility Measurement”, J. Crystal Growth 111, 348 (1991).
  3. M. Tanaka, H. Sakakibara and T. Nishinaga, “Molecular Beam Epitaxial Growth and Characterization of CoAl/AlAs/GaAs Metal/Semiconductor Heterostructures”, Appl. Phys. Lett. 59, 3115 (1991).
  4. M. Tanaka, H. Sakakibara, T. Nishinaga, N. Ikarashi, K. Ishida, “Growth of AlAs/CoAl/AlAs Metal/Semiconductor Heterostructures by Molecular Beam Epitaxy”, Surface Science 267, 38 (1992).
  5. M. Tanaka, N. Ikarashi, H. Sakakibara, K. Ishida, T. Nishinaga, “Atomic-Scale Morphology and Interfaces of Epitaxially Embedded Metal(CoAl)/Semiconductor(GaAs/AlAs) Heterostructures”, Appl. Phys. Lett. 60, 835 (1992).
  6. M. Tanaka, T. Noda and H. Sakaki <Invited paper>, “Atomic-scale characterization and control of semiconductor interfaces grown by molecular beam epitaxy”, Materials Science and Engineering B14, pp.304-310 (1992).
  7. N. Ikarashi, M. Tanaka, H. Sakaki and K. Ishida, “High Resolution Electron Microscopy of Growth Interruption Effect on AlAs/GaAs Interfacial Structure during Molecular Beam Epitaxy”, Appl. Phys. Lett. 60, 1360 (1992).
  8. N. Ikarashi, M. Tanaka, T. Baba, H. Sakaki and K. Ishida, “High Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Cross Section”, Proc. 4th Conf. on Frontiers of Electron Microscopy in Materials Science.
  9. X.Q. Shen, M. Tanaka, and T. Nishinaga, “Resharpening Effect of AlAs and Fabrication of Quantum Wires on V-Grooved Substrates by Molecular Beam Epitaxy”, J. Crystal Growth 127, 932 (1993).
  10. H. Sakaki, T. Noda, M. Tanaka, J. Motohisa, Y. Kadoya, N. Ikarashi, “Atomic-scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures”, in Physical Properties of Semiconductor Interfaces at Sub-nanometer Scale, edited by H.W.M. Salemink, NATO-ASI Series, Kluwer Academic Publishers, 1993.
  11. N. Ikarashi, M. Tanaka, T. Baba, H. Sakaki, K. Ishida, “High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection”, Jpn. J. Appl. Phys. 32, 2824 (1993).
  12. T. Nishinaga and M. Tanaka, “Behavior of Atomic Steps and Surface Diffusion of Al and Ga Atoms on GaAs Vicinal Substrates by Molecular Beam Epitaxy”, New Functionality Materials, Vol. A, Optical and Quantum-Structural Properties of Semiconductors, pp.69-74, Elsevier Science Publisher. (1993).
  13. M. Tanaka, T. Nishinaga, N. Ikarashi and H. Shimada, “Epitaxial CoAl/AlAs/GaAs Metal/Semiconductor Heterostructures: Growth, Structure and Electronic Properties”, J. Appl. Phys. 75, 885 (1994).
  14. X.Q. Shen, M. Tanaka, K. Wada and T. Nishinaga, “MBE Growth of GaAs, AlAs and GaAlAs on (001)-(111)B V-Grooved Substrates”, J. Crystal Growth 135, 85 (1994).
  15. J.P. Harbison, T. Sands, J. De Boeck, T. Cheeks, P. Miceli, M. Tanaka, L.T. Florez, B.J. Wilkens, G.L. Gilchrist, V.G. Keramidas, “MBE Growth of Ferromagnetic (Mn,Ni)Al Thin Films on AlAs/GaAs”, J. Crystal Growth 127, 650 (1993).
  16. T.L. Cheeks, M.J.S.P. Brasil, J. De Boeck, J.P. Harbison, T. Sands, M. Tanaka, A. Scherer, V.G. Keramidas, “Epitaxial t-(MnNi)Al/(AlGa)As Heterostructures: Magnetic and Magneto-Optic Properties”, J. Appl. Phys. 73, 6121 (1993).
  17. M. Tanaka, J.P. Harbison, T. Sands, J. De Boeck, B. Philips, T.L. Cheeks and V.G. Keramidas, “Epitaxial Growth of Ferromagnetic Ultrathin MnGa Films with Perpendicular Magnetization on GaAs”, Appl. Phys. Lett. 62, 1565 (1993).
  18. J. De Boeck, T. Sands, J.P. Harbison, A. Scherer, H. Gilchrist, T.L. Cheeks, M. Tanaka, V.G. Keramidas, “Non-volatile Memory Characteristics of Sub-micron Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs.”, Electronics Letters 29, 421 (1993).
  19. M. Tanaka, J.P. Harbison, T. Sands, B. Philips, T.L. Cheeks, J. De Boeck, L.T. Florez, V.G. Keramidas, “Epitaxial Ferromagnetic MnGa and MnNiGa with Perpendicular Magnetization on GaAs”, Materials Research Society Symp. Proc. Vol.313, 507 (1993).
  20. M. Tanaka, J.P. Harbison, T. Sands, B. Philips, T.L. Cheeks, J. De Boeck, L.T. Florez, V.G. Keramidas, “Epitaxial MnGa/NiGa Magnetic Multilayers on GaAs”, Appl. Phys. Lett. 63, 696 (1993).
  21. M. Tanaka, J.P. Harbison, T. Sands, B. Philips, T.L. Cheeks, J. De Boeck, L.T. Florez, V.G. Keramidas, “Epitaxial Ferromagnetic MnGa/NiGa Multilayers on GaAs”, J. Magnetism & Magnetic Materials 126, 313 (1993).
  22. M. Tanaka, J.P. Harbison, T. Sands, T.L. Cheeks, J. De Boeck, D. Hwang, L.T. Florez, V.G. Keramidas, “Epitaxial t-MnAl/NiAl Magnetic Multilayers on GaAs”, Appl. Phys. Lett. 63, 839 (1993).
  23. M. Tanaka, J.P. Harbison, T. Sands, J. De Boeck, T.L. Cheeks, V.G. Keramidas, “Magnetotransport Properties of Epitaxial Magnetic Superlattices of Mn-based Intermetallics on GaAs Heterostructures”, Solid-State Electronics 37, 1031 (1994).
  24. M. Tanaka, J.P. Harbison, T. Sands, T.L. Cheeks, G.M. Rothberg, “MBE Growth of MnAs Thin Films on GaAs”, J. Vac. Science & Technology B12, 1091 (1994).
  25. T.L. Cheeks, J.P. Harbison, M. Tanaka, T. Sands, V.G. Keramidas <Invited paper>, “Magnetic Properties of Epitaxial τMnAl/NiAl Magnetic Multilayers Grown on GaAs”, J. Appl. Phys. 75, 6665 (1994).
  26. M. Tanaka, J.P. Harbison and G.M. Rothberg, “Epitaxial Orientation and Magnetic Properties of MnAs Thin Films on (001) GaAs: Template Effects”, Appl. Phys. Lett. 65, 1964 (1994).
  27. M. Tanaka, J.P. Harbison, M.C. Park, Y.S. Park, T. Shin, G.M. Rothberg, “Epitaxial Ferromagnetic MnAs Thin Films Grown by MBE on GaAs: Structure and Magnetic Properties”, J. Appl. Phys. 76, pp.6278-6780 (1994).
  28. M. Tanaka <Invited paper>, “Epitaxial Ferromagnetic Thin Films and Multilayers of Mn-based Metallic Compounds on GaAs”, J. Materials Science & Engineering B31, pp.117-122 (1995).
  29. M. Tanaka, J.P. Harbison and G.M. Rothberg, “Epitaxial Ferromagnetic MnAs Thin Films on (001) GaAs: Template and Epitaxial Orientations”, J. Crystal Growth 150, pp.1132-1138 (1995).
  30. K. Akeura, M. Tanaka, M. Ueki and T. Nishinaga, “Epitaxial Ferromagnetic MnAs Thin Films Grown by Molecular Beam Epitaxy on Si(001) Substrates”, Appl. Phys. Lett. 67, pp.3349-3351 (1995).

1985 – 1990

  1. H. Sakaki, M. Tanaka and J. Yoshino, “One-Atomic-Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy”, Japanese Journal of Applied Physics 24, L417 (1985).
  2. M. Tanaka, H. Sakaki, J. Yoshino and T. Furuta, “Photoluminescence and Absorption Linewidths of Extremely Flat GaAs-AlAs Quantum Wells Prepared by Molecular Beam Epitaxy Including Interrupted Deposition for Atomic Layer Smoothing”, Surface Science 174, 65 (1986).
  3. M. Tanaka, H. Sakaki and J. Yoshino, “Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2〜1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption”, Japanese Journal of Applied Physics 25, L155 (1986).
  4. M. Tanaka and H. Sakaki, “Atomistic Models of Interface Structures in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Grown by Interrupted and Uninterrupted MBE”, Journal of Crystal Growth 81, 153 (1987).
  5. M. Tanaka, H. Ichinose, T. Furuta, Y. Ishida and H. Sakaki,, “Direct Observation of Atomic Step Structure at GaAs-AlAs Heterointerfaces in Transmission Electron Microscopy and Improved Lattice Image to Detect the Interface by Material-Dependent Patterns”, Journal de Physique 48, C5-101 (1987).
  6. M. Tanaka and H. Sakaki, “Surface Migration Study of Atoms and Formation of Truly-Smooth Top and Bottom Heterointerfaces in GaAs-AlAs Quantum Wells by Temperature-Switched Technique in Molecular Beam Epitaxy”, Journal of Superlattices and Microstructures 4, 237 (1988).
  7. M. Tanaka and H. Sakaki, “Interface Roughness of GaAs-AlAs Quantum Wells Grown by Molecular Beam Epitaxy: Misorientation Effects”, Journal of Applied Physics 64, 4503 (1988).
  8. M. Tanaka and H. Sakaki, “MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells”, Japanese Journal of Applied Physics 27, L2025 (1988).
  9. M. Tanaka and H. Sakaki, “Formation of Planar Superlattice States in New Grid-Inserted Quantum Well Structures”, Applied Physics Letters 54, 1326 (1989).
  10. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka and T. Matsusue, “Interface Roughness Scattering in GaAs-AlAs Quantum Wells”, Applied Physics Letters 51, 1934 (1987).
  11. G. Fasol, M. Tanaka, H. Sakaki and Y. Horikoshi, “Interface Roughness and the Dispersion of Confined LO Phonons in GaAs-AlAs Quantum Wells”, Physical Review B38, 6056 (1988).
  12. G. Fasol, M. Tanaka, H. Sakaki and Y. Horikoshi, “Interface Roughness and Confined LO Phonons in Quantum Wells”, Journal of Crystal Growth 95, 75 (1989).
  13. T. Noda, M. Tanaka and H. Sakaki, “Electron Mobility in Potential Inserted Quantum Wells (PI-QWs)”, Journal of Crystal Growth 95, 60 (1989).
  14. Y. Arakawa, T. Sogawa, M. Nishioka, M. Tanaka and H. Sakaki, “Picosecond Pulse Generation (<1.8ps) in a Quantum Well Laser by a Gain Switching Method”, Applied Physics Letters 51, 1295 (1987).
  15. T. Sogawa, Y. Arakawa, M. Tanaka and H. Sakaki, “Observation of a Short Optical Pulse (<1.3ps) from a Gain Switched Quantum Well Laser”, Applied Physics Letters 53, 1580 (1988).
  16. J. Motohisa, M. Tanaka and H. Sakaki, “Anisotropic Transport and Non-Parabolic Miniband in a Novel In-Plane Superlattice Consisting of Grid-Inserted Selectively Doped Heterojunction”, Applied Physics Letters 55, 1214 (1989).
  17. H. Sakaki, M. Tanaka, T. Noda and J. Motohisa <Invited paper>, “Atomic-Scale Characterization and Control of Interface Roughness and Corrugation in Quantum Heterostructures”, Defect Control in Semiconductors, Edited by K. Sumino, North Holland, 1990.
  18. M. Tanaka, T. Suzuki and T. Nishinaga, “Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy”, Japanese Journal of Applied Physics 29, L706 (1990).
  19. M. Tanaka, J. Motohisa and H. Sakaki <Invited paper>, “MBE Growth and Electronic Properties of Planar Superlattices Consisting of Grid-Inserted Heterostructures”, Proc. of SPIE’s 1990 Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications, Quantum Well and Superlattice Physics III, SPIE Vol.1283, p254 (1990).
  20. M. Tanaka, J. Motohisa and H. Sakaki, “Formation of In-Plane Superlattice and Quantum Wire States in Grid Inserted Heterostructures with Period of 80-160A: Anisotropy of Electronic States”, Surface Science 228, 408 (1990).
  21. T. Noda, M. Tanaka and H. Sakaki, “Correlation Length of Interface Roughness and Its Enhancement in MBE-Grown GaAs-AlAs Quantum Wells Studied by Mobility Measurement”, Applied Physics Letters 57, 1651 (1990).

(b)Invited International Conferences (国際会議招待講演)

  1. H. Sakaki, M. Tanaka and M. Tsuchiya <Invited talk>, “One-Atomic-Layer Heterointerface Roughness and Its Elimination in MBE-Grown GaAs-AlAs and GaAs-AlGaAs Quantum Well Structures and Devices Prepared with Interrupted Deposition”, 2nd International Conference on Superlattices, Microstructures, and Microdevices, Goteborg, Sweden, 1986 August.
  2. H. Sakaki, M. Tanaka and T. Noda, <Invited talk>, “Interface Roughness and Corrugation in Quantum Heterostructures”, International Conference on Defect Control in Semiconductors, Yokohama, Japan, 1989 September.
  3. M. Tanaka, J. Motohisa and H. Sakaki <Invited talk>, “MBE Growth and Electronic Properties of Planar Superlattices”, SPIE’s 1990 Symposium on Advances in Semiconductors and Superconductors: Physics toward Device Applications, San Diego, USA, 1990 March.
  4. M. Tanaka <Invited talk>, “Atomic-scale characterization and control of semiconductor interfaces grown by molecular beam epitaxy”, Proc. of the Workshop on “Epitaxy, defects, interfaces and processing of electronic and photonic materials”, Pittsburgh, U.S.A., 1991 November.
  5. T.L. Cheeks, J.P. Harbison, M. Tanaka, T. Sands, V.G. Keramidas, “Magnetic Properties of Epitaxial τMnAl/NiAl Magnetic Multilayers Grown on GaAs”, <Invited talk> 38th Annual Conference on Magnetism and Magnetic Materials, 1993 Nov., Minneapolis.
  6. Masaaki Tanaka <Invited talk>, “Epitaxial Ferromagnetic Thin Films and Multilayers of Mn-based Metallic Compounds on GaAs”, 5th NEC Symposium on Fundamental Approaches to New Material Phases ‘Spin-Dependent Phenomena in Multilayer Systems’, Karuizawa, October 1994.
  7. Masaaki Tanaka <Invited talk>, “Epitaxial Ferromagnetic Thin Films and Heterostructures on GaAs”, Materials Research Society 1994 Fall Meeting, Boston, U.S.A., 1994 November.
  8. Masaaki Tanaka <Invited talk>, “Epitaxial Magnetic and Nonmagnetic Metallic Compounds Integrated with III-V Semiconductors”, American Physical Society 1996 March Meeting, St. Louis, March 1996.
  9. M. Tanaka <Invited talk>, “Epitaxial Ferromagnetic Compounds Integrated with III-V Semiconductors”, 8th Int. Conf. on Modulated Semiconductor Structures, Santa Barbara, U.S.A., July 1997.
  10. M. Tanaka <Invited talk>, “Growth and Magnetic Properties of GaMnAs and Related Heterostructures”, Japanese-Polish Symposium on Diluted Magnetic Semiconductors, pp.57-60, Warsaw, Poland, September 1997.
  11. M. Tanaka <Invited talk>, “Magnetic compound/Compound Semiconductor Heterostructures”, 25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25), Salt Lake City, USA, January, 1998.
  12. M. Tanaka <Invited talk>, “Epitaxial Ferromagnet/Semiconductor Hybrid Structures”, 10th Int. Conf. on Molecular Beam Epitaxy, Cannes, France, September 1998.
  13. M. Tanaka <Invited talk>, “Epitaxial MnAs/GaAs/MnAs Ferromagnet/Semiconductor Heterostructures”, Advanced Heterostructure Workshop ’98, Hawaii, December 1998.
  14. M. Tanaka <Invited talk>, “Epitaxial Ferromagnet/Semiconductor Heterostructures”, Materials Research Society 1999 Spring Meeting, San Francisco, April 1999.
  15. M. Tanaka <Invited talk>, “Ferromagnetic Semiconductor Heterostructures Based on (GaMn)As”, American Vacuum Society 46th International Symposium, Seattle, October 25-29, 1999.
  16. M. Tanaka, M. Miyamura, and H. Shimizu <Invited talk>, “Enhancement of magneto-optical effect in a GaAs:MnAs hybrid structure sandwiched by GaAs/AlAs distributed Bragg reflectors”, 11th International Conference on Molecular Beam Epitaxy, Mo4.1, Beijing, September 10-15, 2000.
  17. M. Tanaka <Invited talk>, “Epitaxial III-V Based Magnetic Heterostructures”, Advanced Heterostructure Workshop 2000, Hawaii Big Island, December 3-8, 2000.
  18. M. Oshima, K. Ono, M. Mizuguchi, T. Uragami, H. Fujioka, H. Ofuchi, M. Tanaka and H. Akinaga, <Invited talk> “Surface Chemistry and Growth Process of Magnetic Nanocrystals Studied by Synchrotron Radiation “, The 2000 International Chemical Congress of Pacific Basin Societies (Pacifichem 2000), Session 166 ‘The Chemistry of Inorganic Thin Film Formation’, Honolulu, December 14 – 19, 2000.
  19. M. Tanaka <Invited talk>, “Formation and Magneto-Optical Properties of Semiconductor-Based Magneto-Photonic Multilayers”, The 2000 International Chemical Congress of Pacific Basin Societies (Pacifichem 2000), Session 166 ‘The Chemistry of Inorganic Thin Film Formation’, Honolulu, Hawaii, December 14 – 19, 2000.
  20. M. Tanaka <Invited talk>, “Semiconductor Spintronic Materials and Devices: Current Status and Future Prospects”, 2001 International Seminar at the Research Center for Interface Quantum Electronics, Hokkaido University, January 31- February 1, 2001.
  21. H. Shimizu* and M. Tanaka (*Invited young scientist’s presentation), “Enhanced magneto-optical effect in III-V semiconductor-based magneto-photonic crystals”, Proc. of the 6th Int. Symp. on Advanced Physical Fields, Growth of Well-defined Nanostructures, Tsukuba, March 6-9, 2001.
  22. M. Tanaka <Invited talk>, “Semiconductor Based Epitaxial Magnetic Heterostructures”, 5th RIKEN International Conference on Coherent Control in Matter, Shonan International Village, April 22-25, 2001.
  23. M. Tanaka <Invited talk>, “Epitaxial Magnetic Heterostructures Based on Semiconductors”, International Workshop on Quantum Transport in Synthetic Metals & Quantum Functional Semiconductors (QTSM & QFS 2001), Seoul, Korea, May 8-11, 2001.
  24. M. Tanaka <Invited talk>, “Semiconductor-Based Epitaxial Magnetic Heterostructures”, International Conference on Materials for Advanced Technologies (ICMAT-2001), Symposium on Advanced Data Storage Materials, Singapore, July 1-6, 2001.
  25. M. Tanaka <Invited talk>, “III-V Based Magnetic Heterostructures for Spintronics”, 10th Int. Conf. on Modulated Semiconductor Structures (MSS-10), paper ThE3, Linz, Austria, July 23-27, 2001.
  26. M. Tanaka <Invited talk>, “III-V Based Epitaxial Magnetic Heterostructures”, 15th International Vacuum Congress/ American Vacuum Society Meeting 48th International Symposium, San Francisco, October 29 – November 2, 2001.
  27. M. Tanaka <Invited talk>, “Magnetic Heterostructures and Nanostructures for Spin Electronics”, Int. Symp. on Artificial and Natural Nanostructures (ANN01), Rome, Italy, December 10-12, 2001.
  28. M. Tanaka <Invited talk>, “Spin-dependent Transport and Tunneling in III-V Based Magnetic Heterostructures”, The 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002), Xi-an, China, June 10-14, 2002.
  29. M. Tanaka <Invited talk>, “Semiconductor-Based Magnetic Heterostructures for Spin Electronics”, 2002 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD-2002), July 1-3, 2002 Hokkaido University, Sapporo, Japan
  30. M. Tanaka <Invited talk>, “Spin-polarized Tunneling in Fully Epitaxial Semiconductor-based Magnetic Tunnel Junctions”, 2nd International Conference on the Physics and Application of Spin-related Phenomena in Semiconductors (PAPSPS 2002), paper L1, Wuerzburg, Germany, July 23-26, 2002.
  31. M. Tanaka <Invited talk>, “High Ferromagnetic Transition Temperature (172K) in Mn-delta-doped GaAs Heterostructures with p-type Selective Doping”, 10th International Advanced Heterostructure Workshop, the Big Island of Hawaii, December 1-6, 2002.
  32. M. Tanaka <Invited talk>, “Spin tunneling and magnetotransport in GaMnAs-based heterostructures”, Annual American Physical Society (APS) March Meeting 2003, paper S7.004, Austin, USA, March 3-7, 2003.
  33. M. Tanaka <Invited talk>, “Ferromagnetic heterostructures for spin-electronics”, Sweden-Japan Nanotechnology Colloquium, Lund, Sweden, March 16-18, 2003.
  34. M. Tanaka <Invited talk>, “Nanotechnology research in Japan”, Sweden-Japan Nanotechnology Colloquium, Lund, Sweden, March 16-18, 2003.
  35. M. Tanaka <Invited talk>, “Spin tunneling and transport in ferromagnetic III-V heterostructures”, 32nd International School on the Physics of Semiconducting Compounds, Ustron-Jaszowiec, Poland, May 31-June 6, 2003.
  36. M. Tanaka, S. Sugahara, and A.M. Nazmul <Invited talk>, “Ferromagnetic Heterostructures based on Semiconductors”, 2003 Summer Conference of the Korean Magnetics Society and Japan-Korea Symposium on Spintronics and its Applications, July 19-21, 2003, Hanwha Resort at Haewoondate Beach, Busan, Korea.
  37. M. Tanaka <Invited talk>, “Ferromagnetic heterostructures for semiconductor spintronics”, Japan-US Workshop on Frontiers of Nanoscale Science and Technology, Komaba, University of Tokyo, July 10-12, 2003.
  38. M. Tanaka and A.M. Nazmul <Invited talk>, “Control of ferromagnetic order and high Curie temperature in Mn-delta-doped i-HEMT structures”, Spintech II, International Conference and School on Semiconductor Spintronics and Quantum Information Technology, Crowne Plaza Hotel, Brugge, Belgium August 4-8, 2003.
  39. M. Tanaka <Invited talk>, “Ferromagnetic heterostructures for semiconductor spintronics”, International Symposium on Compound Semiconductors (ISCS-2003), San Diego, August 25-27, 2003.
  40. M. Tanaka <Invited talk>, “Control of ferromagnetic order in selectively p-doped GaMnAs-based heterostructures”, Int. Conf. on Solid State Devices and Materials (SSDM), ‘Core area 8 Quantum Nanostructure Devices and Physics’, Tokyo, September 16-18, 2003.
  41. M. Tanaka <Invited talk>, “Ferromagnetic Semiconductor Heterostructures for Spintronics”, The Fourth Korea-Japan Workshop on Strongly Correlated Systems on Spectroscopy of Correlated Materials and their Nano-Structures, Iizuna-Kogen, Nagano, Japan, September 24-26, 2003.
  42. M. Tanaka <Plenary talk>, “Epitaxial ferromagnetic heterostructures based on semiconductors: growth, properties, and applications”, Plenary sessions on ‘The Future of Spintronics’ in the 50th American Vacuum Society (AVS) Annual Symposium, Baltimore, November 2-7, 2003.
  43. M. Tanaka <Invited talk>, “Ferromagnetic semiconductor heterostructures”, International Workshop on Nano-Scale Magnetoelectronics, Nagoya, 25-27 November, 2003
  44. A. M. Nazmul, T. Amemiya, S. Sugahara, and M. Tanaka <Invited talk>, “Ferromagnetism in Semiconductor-based Heterostructures”, International Conference on Physics for Understanding and Applications, Auditorium BUET, Dhaka, Bangladesh, 22 – 24 February, 2004.
  45. M. Tanaka <Invited talk>, “Ferromagnetic heterostructures for spintronics”, International Symposium on Mesoscopic Superconductivity and Spintronics 2004 (MS+S2004), NTT Basic Research Laboratories Atsugi, Kanagawa, March 1-4, 2004.
  46. M. Tanaka <Invited talk>, “Control of ferromagnetic order in semiconductor heterostructures with Mn delta doping”, MRS Spring Meeting 2004, San Francisco, April 12-16, 2004.
  47. M. Tanaka <Invited talk>, “Nanospintronics Design and Realization”, International Conference on Nanospintronics Design and Realization (ICNDR), 24-28 May, 2004.
  48. M. Tanaka <Plenary talk>, “Spintronics: Recent Progress and Tomorrow’s Challenges”, International Conference on Molecular Beam Epitaxy (MBE2004), Edinburgh, UK, August 22 – 27, 2004.
  49. M. Tanaka <Invited talk>, M. Tanaka, S. Sugahara, and A. M. Nazmul, “Magnetic Semiconductors and Heterostructures for Spin Electronics”, The First Asia Forum on Magnetics, Okinawa Convention Center, Ginowan, Okinawa, Japan, September 21-24, 2004.
  50. M. Tanaka <Invited talk>, “Ferromagnetic Semiconductor Heterostructures for Spintronics”, Advanced Heterostructure Workshop, the Big Island of Hawaii, December 5-10, 2004.
  51. M. Tanaka <Invited lecture>, “Ferromagnetic Semiconductor Heterostructures and Devices for Spintronics”, Spintronics tutorial session at the American Physical Society March Meeting, Los Angeles, March 20-25, 2005.
  52. M. Tanaka <Invited talk>, “Heterojunction Engineering of Semiconductor Ferromagnetism” (suggested title), American Physical Society March Meeting, Los Angeles, March 20-25, 2005.
  53. M. Tanaka and S. Sugahara <Invited talk>, “Spin devices for integrated circuits”, International Magnetics Conference (Intermag 2005), Nagoya Congress Center, April 4-8, 2005.
  54. M. Tanaka <Invited talk>, “Ferromagnetic heterostructures for spintronics”, 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures (ACSIN-8) and, 13th International Conference on Thin Films (ICTF-13), Stockholm, Sweden, June 19-23, 2005.
  55. S. Sugahara <Invited talk>, “Spin MOSFETs as a basis for integrated spin-electronics”, 5th IEEE Conference on Nanotechnology, Nogoya, July 11-15, 2005.
  56. S. Sugahara <Invited talk>, “Spin MOS Transistors”, SRC: 6th International Workshop on Future Information Processing Technologies (IWFIPT), Asheville, USA, August 29 – September 1, 2005.
  57. M. Tanaka <Invited talk>, “Si-based Spintronics Devices”, UT-TUM Bilateral Symposium on Nanosciences, Komaba Campus of the University of Tokyo, October 5, 2005.
  58. A.M. Nazmul and M. Tanaka <Invited talk>, “Ferromagnetic III-V semiconductor heterostructures with Mn delta doping”, Symposium on ‘Dilute magnetic materials for spintronic applications’, EMRS Fall Meeting, Warsaw 4-8 September 2006.
  59. M. Tanaka <Invited talk>, “New materials and device structures for semiconductor spintronics”, 34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, USA, January 14-18, 2007.
  60. S. Ohya and M. Tanaka (invited) “Recent Progress in Ferromagnetic Semiconductor Heterostructures” 1st International Symposium on Advanced Magnetic Materials and Applications (ISAMMA) Hotel Shilla, Jeju Island, Korea, May 28- June 1, 2007.
  61. M. Tanaka (invited) “Recent Progress in Group IV and III-V-based Ferromagnetic Semiconductors” Polish-Japanese Seminar on Ferromagnetism and Magnetic Nanostructures in Semiconductors, Leszno, Poland, September 26-29 (2007).
  62. M. Tanaka (invited) “Spin MOSFETs and reconfigurable logic design” Workshop on Ferromagnetic Logic Devices, Circuits and Applications, UCLA, Los Angeles, February 21-22, 2008.
  63. M. Tanaka (invited) “Spintronics materials and devices for advanced electronics” 2008 RCIQE International Seminar on Advanced Semiconductor Materials and Devices, Hokkaido University, Sapporo, March 3-4, 2008.
  64. M. Tanaka (invited) “Materials and Devices for Semiconductor Spintronics” 4th Asian Conference of Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-23, 2008.
  65. M. Tanaka (invited) “Recent Progress in Materials and Devices for Semiconductor Spintronics” 9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2008) Lodz, Poland, 1st-4th June 2008.
  66. M. Tanaka (Keynote presentation, invited) “Spin dependent transport in III-V magnetic heterostructures” Spintronics 2008, Spin Sensing and Devices, SPIE Optics & Photonics Symposium, San Diego, August 10-14, 2008.
  67. M. Tanaka, P-N. Hai, and S. Ohya (invited) “Huge magnetoresistance and electromotive force in Zinc-Blende MnAs nanoparticles / III-V semiconductor hybrid structures” 13th Advanced Heterostructures and Nanostructures Workshop(AHNW 2008) – Workshop on Innovative Nanoscale Devices and Systems – Hapuna Beach Prince Hotel, Hawaii December 7-12, 2008.
  68. S. Ohya, P-N. Hai, and M. Tanaka (invited) “III-V- Semiconductor-Based Ferromagnetic Heterostructures” Asian Magnetics Conference 2008, Busan, Korea, December 10-13, 2008.
  69. S. Ohya and M. Tanaka “Ferromagnetic semiconductors and heterostructures” JSPS-Argonne National Lab Joint Workshop on Nanotechnology, Argonne National Laboratory, USA, March 6-7, 2009.
  70. Ahsan M. Nazmul, Sanjukta Ghosh, and Masaaki Tanaka “Strong Magnetic Circular Dichroism in Mn Delta-doped GaAs” American Physical Society March Meeting 2009, paper No.T22.00007, Pittsburg, March 16-20,2009.
  71. M. Tanaka (invited) “Functionalities of GaAs/MnAs nanocomposites” 5th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH V), Krakow (Cracow), Poland, July 7-11, 2009.
  72. P. N. Hai, S. Ohya, S. E. Barnes, S. Maekawa, and M. Tanaka “Electromotive force and huge magnetoresistance induced by zinc-blende MnAs nanomagnets in magnetic tunnel junctions” 5th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH V), Krakow (Cracow), Poland, July 6-11, 2009.
  73. S. Ohya, I. Muneta,and M. Tanaka “Quantum level control in III-V based ferromagnetic semiconductor heterostructures with a GaMnAs quantum well and double barriers” 5th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH V), Krakow (Cracow), Poland, July 6-11, 2009.
  74. P.N. Hai, S. Ohya, S.E. Barnes, S. Makeawa,and M.Tanaka (invited) “Electromotive force and magnetoresistance (~100,000%) in magnetic tunnel junctions with zinc-blende MnAs nanomagnets 14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, July 20-24, 2009.
  75. Y. Shuto, R. Nakane, H. Sukegawa, S. Yamamoto, M. Tanaka, K. Inomata, and S. Sugahara “Fabrication and characterization of pseudo-spin-MOSFETs International Symposium on Silicon Nanodevices in 2030: Prospects by world’s leading scientists Tokyo Institute of Technology, Oookayama, Tokyo, October 13-14, 2009.
  76. M. Tanaka, P.N. Hai, and S. Ohya (invited) “Electromotive force and huge magnetoresistance (~100,000%) in magnetic nanostructures with zincblende MnAs nanomagnets” 9th Japan-Sweden QNANO Workshop, Komaba campus at University of Tokyo, November 13-14, 2009.
  77. S. Ohya, I. Muneta, P. N. Hai, and M. Tanaka “Spin-Dependent Resonant Tunneling Spectroscopy on the Valence-Band Structure of Ferromagnetic-Semiconductor GaMnAs” International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN2009), Komaba campus at University of Tokyo, November 18-20, 2009.
  78. I. Muneta, S. Ohya,and M. Tanaka “Spin-dependent properties of three-terminal ferromagnetic semiconductor heterostructures with a GaMnAs quantum well and double barriers: Control of quantum levels and TMR” International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN2009), Komaba campus at University of Tokyo, November 18-20, 2009.
  79. P. N. Hai, S. Ohya, and M. Tanaka “Electromotive force and huge magnetoresistance in magnetic tunnel junctions with zinc-blende MnAs nanomagnets” International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN2009), Komaba campus at University of Tokyo, November 18-20, 2009.
  80. Ahsan M. Nazmul and Masaaki Tanaka (invited) “Ferromagnetic Semiconductor Heterostructures for Spintronics” 12nd International Symposium on Microwave and Optical Technology (ISMOT-2009), New Delhi, India, December 16-19, 2009.
  81. S. Ohya, I. Muneta, P. N. Hai, and M. Tanaka “Valence-Band Structure of Ferromagnetic-Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy” 11th Joint MMM-Intermag Conference, Washington DC, USA, January 18-22, 2010.
  82. I. Muneta, S. Ohya, and M. Tanaka “Spin-dependent properties of three-terminal ferromagnetic semiconductor heterostructures with a GaMnAs quantum well and double barriers: Control of quantum levels and TMR” 11th Joint MMM-Intermag Conference, Washington DC, USA, January 18-22, 2010.
  83. M. Tanaka, P.N. Hai, and S. Ohya (invited) “Electromotive force and huge magnetoresistance in magnetic tunnel junctions with zinc-blende MnAs nanomagnets” 4th International Workshop on Spin Current and the 2nd International Workshop on Spin Caloritronics, Sendai, February 8-10, 2010.
  84. Ryota Akiyama, Pham Nam Hai, Masaaki Tanaka “Structure-parameter dependence of the electromotive force in spin batteries” 4th International Workshop on Spin Current and the 2nd International Workshop on Spin Caloritronics, Sendai, February 8-10, 2010.
  85. R. Akiyama, Pham Nam Hai, and M. Tanaka “Equivalent circuit model of the “spin battery” with zinc-blende MnAs nanomagnets” International Symposium on Quantum Nanostructures and Spin-related Phenomena (QNSP), Komaba Campus, University of Tokyo, March 9-11, 2010.
  86. P. N. Hai, S. Ohya, M. Tanaka, S. E. Barnes and S. Maekawa (invited) “Electromotive force and huge magnetoresistance in magnetic tunnel junctions with zinc-blende MnAs nanomagnets” American Physical Society (APS) March Meeting 2010, paper L36.00010, Portland, Oregon, USA, March 15-19, 2010.
  87. Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka “Investigation on the valence-band structure of ferromagnetic-semiconductor GaMnAs using spin-dependent resonant tunneling spectroscopy” American Physical Society (APS) March Meeting 2010, paper P35.00008, Portland, Oregon, USA, March 15-19, 2010.
  88. Iriya Muneta , Shinobu Ohya , Masaaki Tanaka “Spin-dependent transport properties of three-terminal ferromagnetic-semiconductor heterostructures with a GaMnAs quantum well and double barriers: Control of quantum levels and TMR” American Physical Society (APS) March Meeting 2010, paper W35.00010, Portland, Oregon, USA, March 15-19, 2010.
  89. M. Tanaka, P.N. Hai, S. Ohya, S.E. Barnes, and M. Maekawa (invited) “Electromotive force and huge magnetoresistance in magnetic nanostructures” Korean Physical Society Meeting, Daejeon, Korea, April 21-23, 2010.
  90. Masaaki Tanaka, Pham Nam Hai, Shinobu Ohya “Spintronics Materials and Devices – New Functionalities and Electromagnetism -” Tsinghua University – University of Tokyo Joint Workshop on Secure-Life Photonics, Hongo Campus, University of Tokyo, May 13, 2010.
  91. Masaaki Tanaka (invited) “Electromotive force and huge magnetoresistance in magnetic nanostructures” International Conference on Nano-spintronics Design and Realization (ICNDR-2010), Osaka University, May 30-June 4, 2010.
  92. Pham Nam Hai, S. Ohya, and M. Tanaka (invited) “Spin motive force” 37th International Symposium on Compound Semiconductors (ISCS 2010), Takamatsu, Japan, May 31 – June 4, 2010.
  93. Pham Nam Hai and M. Tanaka (invited) “Emerging semiconductor spintronic devices and materials” Solid-State Systems Symposium 2010 (4S-2010), Vietnam National University, Ho Chi Minh (VNU-HCM), Vietnam, June 17-18, 2010,
  94. S. Ohya, I. Muneta. P. N. Hai, and M. Tanaka “Fermi Level Position and Valence-Band Structure in GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  95. S. Ohya, K. Takata, M. Tanaka, “Universal Valence-Band Picture of GaMnAs with High Curie Temperature” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  96. I. Muneta, S. Ohya, and M. Tanaka “Spin-dependent transport in GaMnAs-based double-quantum-well resonant-tunneling diodes” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  97. P. N. Hai, S. Ohya, and M. Tanaka “Spin-dependent Transport and Long Spin-Relaxation Time in a Hexagonal MnAs Nanoparticle” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  98. S. Yada, R. Okazaki, S. Ohya, and M. Tanaka “Magnetic and structural properties of Ge1-xMnx films grown on Ge (111) substrates” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  99. S. Sato, R. Nakane, S. Kokutani, and M. Tanaka “Influence of anisotropic magnetoresistance on nonlocal signals in multi-terminal lateral devices with a Si channel and Fe electrodes” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  100. A. M. Nazmul, S. Ghosh, S. Ohya, and M. Tanaka “Control of ferromagnetism by light irradiation in a Mn-delta-doped GaAs/p-AlGaAs heterostructure” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  101. Y. Shuto, R. Nakane, W. H. Wang, H. Sukegawa, S. Yamamoto, M. Tanaka, K. Inomata,and S. Sugahara “A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET” 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI), August 1-4, 2010, University of Tokyo, Tokyo, Japan.
  102. Masaaki Tanaka (invited) “Properties and functionalities of MnAs nanoparticles in III-V: spin transport, magnetoresistance, and electromotive force” 2010 Magnetic Nanostructures Gordon Research Conference, Bates College, Lewiston, Maine, USA, August 8-13, 2010.
  103. S. Ohya, K. Takata and M. Tanaka “Resonant Tunneling in a GaMnAs Surface Quantum Well and Its Valence-Band Picture” 16th International Conference on Molecular Beam Epitaxy, Berlin, August 23-27, 2010.
  104. Masaaki Tanaka (invited) “Properties and functionalities of MnAs-nanoparticle / III-V-semiconductor hybrid structures” Symposium N ‘Inhomogeneous and hybrid magnetic semiconductor systems’, E-MRS Fall Meeting 2010, Warsaw, Poland, September 13-17, 2010.
  105. Masaaki Tanaka (invited) “III-V based magnetic heterostructures and nanostructures: Spin dependent tunneling, magnetoresistance, and electromotive force” IBM MRC Workshop on III-V Devices, IBM Zurich Reseatch, Zurich, Switzerland, September 20-21, 2010
  106. Masaaki Tanaka (plenary, invited) “Properties and functionalities of MnAs-nanoparticle / III-V-semiconductor hybrid structures: Spin transport, magnetoresistance, and electromotive force” IEEE 7th International Symposium on Metallic Multilayers (MML2010), Berkeley, USA, September 19-24, 2010.
  107. Shinsuke Yada, Ryohei Okazaki and Masaaki Tanaka “Large magnetoresistance of Ge1-xMnx single films and heterostructures with magnetic nanocolumns” 2010 International Conference on Solid State Devices and Materials (SSDM 2010), University of Tokyo, Tokyo, Japan, September 22-24, 2010.
  108. Pham Nam Hai, S. Ohya, and M. Tanaka “Spin dependent transport in a single-electron spin transistor” University of Wuerzburg – University of Tokyo joint Workshop on Advances in Nanophotonics and Spintronics, Wuerzburg, Germany, October 4-6, 2010.
  109. Masaaki Tanaka and Shinobu Ohya (invited) “Spin dependent resonant tunneling in III-V-based ferromagnetic-semiconductor heterostructures” 55th Annual Conference on Magnetism and Magnetic Materials (MMM2010), Atlanta, USA, November 14-18, 2010.
  110. S. Ohya, K. Takata, and M. Tanaka, “Universal Valence-Band Picture of GaMnAs Studied by Resonant Tunneling Spectroscopy”, 55th Annual Conference on Magnetism and Magnetic Materials (MMM2010), Atlanta, USA, November 14-18, 2010.
  111. P. N. Hai, S. Ohya and M. Tanaka “Long spin-relaxation time (10 microsecond) in a single ferromagnetic-metal MnAs nanoparticle” 55th Annual Conference on Magnetism and Magnetic Materials (MMM2010), Atlanta, USA, November 14-18, 2010.
  112. S. Yada, R. Okazaki and M. Tanaka “Large positive magnetoresistance of Ge1-xMnx films with magnetic nanocolumns and its heterostructure” 55th Annual Conference on Magnetism and Magnetic Materials (MMM2010), Atlanta, USA, November 14-18, 2010.

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(c)Review Papers and Articles (総説・解説論文)

○英文 総説・解説論文

  1. H. Sakaki, M. Tanaka, T. Noda and J. Motohisa, “Atomic-Scale Characterization and Control of Interface Roughness and Corrugation in Quantum Heterostructures”, Defect Control in Semiconductors, Edited by K. Sumino, North Holland, 1990.
  2. H. Sakaki, T. Noda, M. Tanaka, J. Motohisa, Y. Kadoya, N.Ikarashi, “Atomic-scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures”, Physical Properties of Semiconductor Interfaces at Sub-nanometer Scale, edited by H.W.M. Salemink, NATO-ASI Series, Kluwer Academic Publishers, 1993.
  3. M. Tanaka and T. Nishinaga, “Behavior of Atomic Steps and Surface Diffusion of Al and Ga Atoms on GaAs Vicinal Substrates by Molecular Beam Epitaxy”, New Functionality Materials, Vol.A, Optical and Quantum-Structural Properties of Semiconductors, pp.69-74, Elsevier Sci. Publ. (1993).
  4. M. Tanaka, “Semiconductor-Based Magnetic Heterostructures for Spin Electronics” Proc. of the 2002 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2002), pp.271-276, paper ED2002-172, SDM2002-122, Sapporo, Japan, July 2002.
  5. S. Ohya and M. Tanaka (Invited review) “TMR in Semiconductors” Handbook of Magnetism and Advanced Magnetic Materials, Vol. 5 Spintronics and Magnetoelectronics edited by Helmut Kronmuller and Stuart Parkin, John Wiley & Sons Ltd. (Chichester, UK), 3064 pages, July 2007. Handbook of Magnetism and Advanced Magnetic Materials, 5 Volume-Set. ISBN : 0470022175or_9780470022177
  6. M. Tanaka, M. Yokoyama, P-N. Hai, and S. Ohya (Invited review paper) “Properties and functionalities of MnAs/III-V hybrid and composite structures” in Spintronics, Semiconductors and Semimetals, Vol. 82, pp.455-485, edited by T. Dietl, D. D. Awschalom, M. Kaminska, and H. Ohno (Academic Press, New York, November 2008). 500 pages, ISBN-13: 978-0-08-044956-2, ISBN-10: 0-08-044956-5.
  7. Masaaki Tanaka and Shinobu Ohya “Spintronic Devices Based on Semiconductors” Comprehensive Semiconductor Science and Technology, Vol.6, pp.540-562, Elsevier (Amsterdam), February 2011.
  8. M. Tanaka, S. Ohya, Y. Shuto, S. Yada, and S. Sugahara “III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics” Comprehensive Nanoscience and Technology, Vol.4, pp.447-462, Academic Press (Oxford), February 2011.
  9. M. Tanaka “Spintronics Materials and Devices – Ferromagnetic Semiconductors and Heterostructures -” Proceedings of the 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), The University of Melbourne, Melbourne, Victoria, Australia, 11-14 December 2012. IEEE Catalog Number: CFP12763-PRT ISBN: 978-1-4673-3045-9
  10. Masaaki Tanaka, Shinobu Ohya, and Pham Nam Hai (invited) “Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport” Applied Physics Reviews, Vol.1, pp.011102/1-26 (2014).
  11. Le Duc Anh, Pham Nam Hai and Masaaki Tanaka, “Physics Focus: Control of Ferromagnetism by Manipulating the Carrier Wavefunction in N-Type Ferromagnetic Semiconductor (In, Fe)As Quantum Wells”, AAPPS Bulletin vol.24, no.6, pp.30-31, December 2014.
  12. T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S. Kuroda, M. Tanaka, Pham Nam Hai, H. Katayama-Yoshida, “Spinodal nanodecomposition in magnetically doped semiconductors” Reviews of Modern Physics 87, pp.1311-1377 (2015).

○和文 総説・解説論文

  1. 田中雅明 ”結晶成長はどこまで制御できるか―分子線エピタキシーとその周辺技術の発展性” 日本工業新聞掲載「先端技術論文」,1987年4月 文部大臣賞(最優秀賞)受賞論文.
  2. 田中雅明 ”第9回結晶成長国際会議 Topical Symposium ‘Atomic Processes of the Growth on the Stepped Surfaces’ 報告”、結晶成長学会誌 第16巻3&4合併号 (1989年)32-8g.
  3. 田中雅明 ”エピタキシャル強磁性金属/半導体構造の成長・構造・機能” 日本応用磁気学会誌 Vol.20, No.6 pp.950-959 (1996).(M. Tanaka, “Structures, Properties, and Functions of Epitaxial Ferromagnetic Metal / Semiconductor Heterotructures”, J. Magnetics Society of Japan Vol.20, No.6, pp.950-959 (1996).)
  4. 田中雅明 ”磁性体/半導体ハイブリッド構造の新展開” 応用物理 第66巻2号, pp.132-136 (1997).(M. Tanaka, “Recent Progress in Ferromagnet/Semiconductor Hybrid Structures”, Oyo Buturi Vol.66, No.2, pp.132-136 (1997).)
  5. 田中雅明 ”半導体と磁性体の一体化による新機能ヘテロ構造材料の形成” 機能材料 1997年7月号, Vol.17, No.7, pp.5-12 (1997).(M. Tanaka, “Epitaxial Growth and Properties of Ferromagnet/Semiconductor Heterostructures”, Function & Materials, Vol.17 No. 7, pp.5-12 (1997).)
  6. 田中雅明 ”第5章 新しいスピン機能デバイスの探索” 電子工業振興協会編、スピンエレクトロニクス専門調査委員会平成9年度報告書 1998年3月.
  7. 田中雅明 “半導体と不揮発性磁気メモリのハイブリッド化” オプトロニクス1998年3月号 pp. 123-128.(Masaaki Tanaka, “Hybridization of Nonvolatile Magnetic Memory with Semiconductors”, Optronics 1998-No.3, pp.123-128 (1998)).
  8. 田中 雅明、林稔晶、清水大雅、斎藤要、高橋和彦 ”磁性半導体および磁性体/半導体ヘテロ構造のエピタキシャル成長と物性”、日本応用磁気学会第109回研究会「半導体スピンエレクトロニクス -エレクトロニクスデバイスへの新提案-」Vol.109-3, pp.13-20, 東京商工会館、1999年3月18日.(M. Tanaka, T. Hayashi, H. Shimizu, K. Saito, and K. Takahashi, “Epitaxial Growth and Properties of III-V Based Magnetic Semiconductor, and Ferromagnet/Semiconductor Heterostructures”, Proc. of the 109th Topical Meeting of Magnetics Society of Japan, March 1999, Tokyo.)
  9. 田中雅明 ”第5章 新しいスピン機能デバイスの探索” 電子工業振興協会編、スピンエレクトロニクス専門調査委員会平成10年度最終報告書 1999年3月.
  10. 尾嶋正治、小野寛太、水口将輝、藤岡洋、田中雅明、秋永広幸 ”半導体表面への磁性ナノ構造の成長と物性” 日本応用磁気学会誌 Vol.24, No.2, pp.67-73 (2000).(M. Oshima, K. Ono, M. Mizuguchi, H. Fujioka, M. Tanaka, H. Akinaga, “Growth and Properties of Magnetic Nanostructures on Semiconductor Surfaces”, J. Magnetic Society of Japan Vol.24, No.2, pp.67-73 (2000).)
  11. 田中雅明 「半導体スピン機能素子技術の現状と展望」FEDジャーナル Vol.11, No.3, pp.67-75 (2000).(M. Tanaka, “Semiconductor Spintronic Materials and Devices: Current Status and Future Prospects”, Future Electron Device Journal, Vol.11, No.3, pp.67-75 (2000).)
  12. 田中雅明 ”半導体スピンエレトロニクス” 日本応用磁気学会第121回研究会「スピンエレクトロニクスの現状と将来展望」研究会資料121-2, pp.5-10 (2001). 東京・機械振興会館、2001年10月23日. (M. Tanaka, “Semiconductor Spin Electronics”, Record of the 121st Topical Symposium of the Magnetics Society of Japan ‘Current Status and Future Prospects of Spin Electronics’, No.121-2, pp.5-10 (2001), Tokyo, October 23, 2001.)
  13. M. Tanaka (Invited paper), “Ferromagnet (MnAs) / III-V Semiconductor Hybrid Structures”, Special Issue on Semiconductor Spintronics, Semiconductor Science and Technology 17, No.4, pp. 327-341 (2002).
  14. 田中雅明 「スピンエレクトロニクス 半導体と磁性体の一体化に挑む 原子レベルのものづくりで新領域」Science and Technology Journal, 2002年5月号, pp.22-23.(M. Tanaka, “Ferromagnet/Semiconductor Hybrid Materials and Spin-Electronics”, Science and Technology Journal, May 2002, pp.22-23 (2002).)
  15. M. Tanaka, “A New Spin on Semiconductors -New Technology-“, Look Japan Vol.48, pp.28-29, December 2002. University of Tokyo associate professor Tanaka Masaaki describes the revolutionary advances his lab has made in spin electronics research.
  16. 田中雅明 「強磁性半導体ヘテロ接合におけるトンネル磁気抵抗」 固体物理 Vol.37 (11), pp. 853-860 (2002).(M. Tanaka, “Tunneling Magnetoresistance in Ferromagnetic Semiconductor Heterostructures”, Solid State Physics Vol.37 (11), pp. 853-860 (2002).)
  17. 田中雅明、アーサンナズムル、菅原聡、「磁性元素を含むIII-V族半導体ヘテロ接合:磁気輸送特性と強磁性制御」、マテリアルインテグレーション2003年9月号(特集:スピントロニクス)Vol. 16, No.9, pp.5-10 (2003).
  18. 田中雅明 「MnデルタドープGaAsを含む強磁性半導体ヘテロ構造:Tcの上昇と磁性制御」日本応用磁気学会誌トピックス、Vol. 28 No.2, pp. 66-71 (2004).
  19. 田中雅明 「半導体スピントロニクス」 応用物理学会スピンエレクトロニクス研究会入門セミナーテキスト pp.51-58, 2003年12月19日.
  20. 田中雅明、菅原聡、松野知紘 ”Spin-MOSFETと再構成可能な論理回路の提案-スピントロニクス研究の一方向として-” 文部科学省科学研究費特定領域研究「半導体ナノスピントロニクス」ニュースレターNo.2, pp.3-7(平成15年12月)
  21. 菅原聡、田中雅明 「スピンMOSFETとその応用」 日本応用磁気学会第134回研究会、第22回磁性人工構造膜の物性と機能専門研究会共催「スピンエレクトロニクス研究の現状と将来」研究会資料pp.93-100、東京農工大学、2004年1月29日-30日.
  22. 田中雅明 「半導体スピンエレクトロニクスは夢を現実にできるか」 応用物理 73巻 第4号 基礎講座<スピンエレクトロニクス>基礎小講座 pp.508-517 (2004).
  23. 田中雅明「スピン機能半導体の開発」化学工業 Vol.56, No.3, pp.6-13[pp.174-181] (2005).
  24. 田中雅明 平成16年度光技術動向調査報告書「1.2.3 スピン機能半導体材料」光産業技術振興協会 2005年3月発行.
  25. 菅原聡「スピントランジスタ」電子情報通信学会誌 Vol.88, No.7, pp.541-550 (2005); S. Sugahara ”Spin Transistors for Integrated Spin-electronics”, Journal of the Institute of Electronics, Information and Communication Engineers (IEICE), Vol.88, No.7, pp.541-550 (2005).
  26. 菅原聡「スピントランジスタ」第4回スピンエレクトロニクス入門セミナー(代表世話人 田中雅明) テキストpp. 70-79、2005年12月8日、東京大学本郷キャンパス.
  27. 田中雅明 科学立国日本を築く極限に挑む気鋭の研究者たち   第七章スピントロニクスへの挑戦「5節スピン機能半導体材料とスピントロニクス」pp.243-258 榊裕之監修 丸文研究交流財団選考委員会編 日刊工業 2006年3月出版.
  28. Proceedings of the 4th International Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors, Special Issure of physica status solidi, 2007, Wiley VCH Edited by M. Tanaka, K.M. Itoh, S. Katsumoto, M. Shirai, and H. Munekata
  29. 大矢忍、ファムナムハイ、田中雅明 “強磁性半導体量子へテロ構造におけるスピン依存共鳴トンネル効果” 第159回日本磁気学会研究会、第20回スピンエレクトロニクス専門研究会「半導体のスピン機能とデバイス応用」pp.25-29, 2008年3月3日. S. Ohya, Pham Nam Hai, and M. Tanaka “Spin-dependent resonant tunneling effect in ferromagnetic-semiconductor quantum heterostructures” Proceedings of the Symposium on Spin-related Functions in Semiconductors and their Device Applications, Magnetics Society of Japan, pp.25-29, March 3rd, 2007.
  30. 田中雅明 半導体におけるスピン生成 -半導体スピントロニクスの最近の進展- 応用物理78巻第3号, pp.205-216 (2009). Masaaki Tanaka “Creating spins in semiconductors – Recent progress of semiconductor spintronics” Oyo Buturi Vol.78, No.3, pp.205-216 (2009).
  31. 田中雅明 “スピンを生かした新しいエレクトロニクスの開拓” かわさきサイエンス&テクノロジーフォーラム2008 講演録 pp.31-36, pp.169-178. かながわサイエンスパーク、2008年11月12日-13日、2009年3月発行.
  32. 田中雅明 「スピントロニクス関連半導体材料」 物質材料分野俯瞰ワークショップ報告書、科学技術振興機構研究開発戦略センター 2008年12月発行.
  33. 田中雅明 “強磁性半導体へテロ構造 -スピン依存トンネル現象を中心に-” 『スピントロニクスの基礎と材料・応用技術の最前線』 CMC出版 (2009年6月30日発行) Masaaki Tanaka “Ferromagnetic Semiconductor Heterostructures -Spin Dependent Tunneling” Frontiers of Spintronics, Basics, Materials and Applications, CMC Books, (published on June 30, 2009).
  34. ナノテクノロジー・材料分野 科学技術・研究開発の国際比較 2009年版 「磁性材料」 科学技術振興機構研究開発戦略センター、2009年5月発行.
  35. 田中雅明 “スピントロニクス研究会” 分科会・研究会だより  応用物理78巻第7号, p.698 (2009).
  36. 竹田幸治, 小林正起, 岡根哲夫, 大河内拓雄, 岡本淳, 斎藤祐児, 小林啓介, 山上浩志, 藤森淳, 田中新, 岡林潤, 尾嶋正治, 大矢忍, ファムナムハイ, 田中雅明 “軟X線磁気円二色性による希薄磁性半導体Ga1-xMnxAsのMnイオンの磁気的相互作用の研究” 放射光 Vol.22 No.4, pp.202-209, July 2009.
  37. 田中雅明 (総合報告) ”総論 スピントロニクスの現状と展望” 表面科学 Vol.32, No.3(2011 年3月10日発行).
  38. 白井正文、田中雅明 “半導体におけるスピン関連現象の物理と応用 (PASPS-VI)” 固体物理(2011年3月発行)
  39. 田中雅明 “S2群2編 ナノエレクトロニクス 第5章 スピントロニクス” 電子情報通信学会知識ベース 知識の森 http://www.ieice-hbkb.org/portal/doc_516.html http://www.ieice-hbkb.org/files/S2/S2gun_02hen_05.pdf
  40. ナノテクノロジー・材料分野 科学技術・研究開発の国際比較 2011年版
  41. 田中雅明「磁性材料」 科学技術振興機構研究開発戦略センター、2011年5月発行.

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(d)Books, Edited Proceedings (著書・編著)

○英文

  1. Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (MSS11), Elsevier, Physica E Vol. 21 No.2-4 (2004); Edited by Y. Arakawa, H. Ohno, K. Hirakawa, and M. Tanaka    
  2. Proceedings of the 4th International Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors, Special Issure of physica status solidi, 2007, Wiley VCH  Edited by M. Tanaka, K.M. Itoh, S. Katsumoto, M. Shirai, and H. Munekata    
  3. Extended Abstracts of the 6th International Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors, Edited by M. Tanaka, S. Ohya, and M. Shirai, The University of Tokyo, August, 2010.

○和文

  1. 結晶成長用語辞典 共著 共立出版編 (1999年発行). M. Tanaka, “Dictionary of Crystal Growth” edited by I. Sunagawa, Japanese Association of Crystal Growth, Kyoritsu Shuppan, Tokyo.
  2. 田中雅明 電気工学ハンドブック(第6版)A3編12章「磁気的性質」電気学会編(2001年2月発行) M. Tanaka, Chapter A3-12, ‘Magnetic Properties’ in “Handbook of Electrical Engineering”, Institute of Electrical Engineers of Japan, Tokyo, ISBN4-88686-012-5 C3054, pp.116-119 (2001).
  3. (分担執筆): “平成11年度先導研究 スピントロニクス素子基盤技術” 新エネルギー・産業技術総合開発機構、新機能素子研究開発協会スピントロニクス技術専門委員会編、2000年3月発行.
  4. (分担執筆): “平成12年度先導研究 スピントロニクス素子基盤技術” 新エネルギー・産業技術総合開発機構、新機能素子研究開発協会スピントロニクス技術専門委員会編、2001年3月発行.
  5. 田中雅明 「第15章 半導体をベースとしたヘテロ構造 -強磁性転移温度と磁性制御-」 『スピンエレクトロニクスの基礎と最前線』pp.184-198, シーエムシー出版 2004年6月発行.
  6. 田中雅明 「磁性元素を含むIII-V族半導体ヘテロ接合:磁気輸送特性と強磁性制御」 『磁性体材料とスピンエレクトロニクス-電子情報通信機器への展開』第3章第3節 TIC書籍シリーズNo.2038 TIC出版 2004年12月発行. 
  7. 田中雅明 「半導体スピントロニクス」 『ナノマテリアルハンドブック』第5章第5節 エヌティーエス 2005年2月発行.
  8. 田中雅明 平成16年度光技術動向調査報告書「1.2.3 スピン機能半導体材料」 光産業技術振興協会 2005年3月発行.
  9. 田中雅明 科学立国日本を築く極限に挑む気鋭の研究者たち   第七章スピントロニクスへの挑戦「5節スピン機能半導体材料とスピントロニクス」pp.243-258 榊裕之監修 丸文研究交流財団選考委員会編 日刊工業 2006年3月出版.
  10. 田中雅明 「磁性半導体材料」 『電子材料ハンドブック』5.6.4節「磁性半導体材料」朝倉書店、2006年11月発刊. 
  11. 田中雅明 「スピントロニクス関連半導体材料」 物質材料分野俯瞰ワークショップ報告書、科学技術振興機構研究開発戦略センター 2008年12月発行.
  12. 田中雅明 “強磁性半導体へテロ構造 -スピン依存トンネル現象を中心に-” 『スピントロニクスの基礎と材料・応用技術の最前線』 CMC出版 (2009年6月30日発行) Masaaki Tanaka “Ferromagnetic Semiconductor Heterostructures -Spin Dependent Tunneling” Frontiers of Spintronics, Basics, Materials and Applications, CMC Books, (published on June 30, 2009).
  13. ナノテクノロジー・材料分野 科学技術・研究開発の国際比較 2009年版 「磁性材料」 科学技術振興機構研究開発戦略センター、2009年5月発行.
  14. 田中雅明 “S2群2編 ナノエレクトロニクス 第5章 スピントロニクス” 電子情報通信学会知識ベース 知識の森 http://www.ieice-hbkb.org/portal/doc_516.html http://www.ieice-hbkb.org/files/S2/S2gun_02hen_05.pdf
  15. ナノテクノロジー・材料分野 科学技術・研究開発の国際比較 2011年版 田中雅明「磁性材料」 科学技術振興機構研究開発戦略センター、2011年6月発行.
  16. 田中雅明  電気工学ハンドブック(第7版)3編 電気電子物性 第4章「結晶構造とその欠陥」 第12章「磁気的性質」 社団法人電気学会 2013年9月発行.
  17. 第19回「半導体スピン工学の基礎と応用」研究会 19th Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors PASPS-19 PASPS-19実行委員会:田中雅明、大矢忍、中根了昌、2014年12月15日発行.
  18. 田中雅明 「スピントロニクスの基礎と材料・応用技術の最前線 第21章 強磁性半導体ヘテロ構造ースピン依存トンネル現象を中心にー」 普及版 シーエムシー出版、2015年8月発行. ISBN978-4-7813-1026-8 C3054
  19. 田中雅明 磁気便覧 1.9.6項 磁性半導体とその関連材料 日本磁気学会編 丸善出版 2016年1月発行 ISBN 978-4-621-30014-5
  20. 田中雅明 “半導体スピントロニクス:現状と展望” 「スピントロニクスの新しい展望」特集 化学工業 Vol.67 (No.3), pp.165-172, 2016年3月号.

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(e)Press releases and others (新聞、マスコミ記事、その他)

  1. 日経産業新聞記事(1997年1月24日)”磁性体とシリコン一体化”.
  2. 電子情報通信学会誌(1997年4月号 p419)”エピタキシャル成長による強磁性体/半導体の一体化を実現”.
  3. 日本工業新聞記事(1999年7月1日)先端技術学生論文制度「創造技術21の会」が発足、初代会長に田中雅明氏
  4. ATIP Report “New Tunnel MR Junctions Composed of Magnetic Semiconductors and Band Gap Engineering” by Prof. M. Tanaka’s group at the University of Tokyo, June 1999.
  5. 日本工業新聞記事(2000年6月20日-6月23日掲載)21世紀へ続け若き技術者「創造技術21の会」座談会①②③④、田中雅明、増田幸一郎、久礼嘉伸
  6. 日本工業新聞記事(2000年10月16日掲載)長期的視野で基礎研究を育てることの重要性を示す(研究開発欄 白川名誉教授のノーベル化学賞受賞に関してコメント)
  7. 日本工業新聞記事 (2001年1月5日掲載)”科学技術創造立国へ、産学連携して産業活性化”「新時代を拓く創造技術21の会」メンバー座談会
  8. 日本工業新聞 (2001年7月3日掲載)”東大 最大75%のTMR確認 半導体材料のみでは初” http://www.jij.co.jp/21kai/news20010703.htm
  9. 日本工業新聞 (2002年元旦掲載)”創意の種子で、科学技術創造立国へ” 新春座談会 尾身大臣 Vs 先端技術大賞受賞者 尾身幸次、田中雅明、増田幸一郎、小西史一
  10. “夢に向かって-’さきがけ研究21’研究者に聞く 半導体と磁性体を一体化 東京大学工学系研究科 田中雅明助教授” 化学工業日報 20000号記念特集号 2002年11月18日掲載.
  11. “Getting Warmer, MAGNETIC SEMICONDUCTORS REACH HIGHER TEMPERATURES”, Scientific American, pp.30-31, March 2003. In late 2002 Masaaki Tanaka and his co-workers at the University of Tokyo reported that applying a relatively simple annealing process to manganese-doped gallium arsenide boosted its maximum working temperature (known as the Curie temperature) as high as 172 kelvins. That is still far below room temperature, but the result constitutes “a genuine milestone,” according to spintronics expert David D. Awschalom of the University of California at Santa Barbara.
  12. ますますホット、磁性半導体:これまでは極低温でしか働かなかったが、日本の研究チームなどが目覚ましい改善を成し遂げた 日経サイエンス、2003年5月号 p16.
  13. 日経サイエンス2003年7月号 ひらめきの瞬間(21世紀の担い手たち) No.55 整列! スピントロニクス 田中雅明 東京大学大学院工学系研究科電子工学専攻助教授
  14. 大学評価・学位授与機構による「工学系」研究評価報告書 p.11(対象:東京大学工学部・大学院工学系研究科), 2003年3月発表(http://www.niad.ac.jp/hyouka/kenkyu/kougaku/h13houkoku/EH13R3U0021.pdf)。「電気系領域」の中で、特に優れた研究例の冒頭に挙げられた。「…特に優れた研究の例としては,III-V族化合物半導体をベースにして,大きなスピン依存伝導や大きな磁気光学効果の得られることを明らかにし,半導体スピンエレクトロニクスの新領域構築に貢献している研究…」
  15. 172Kで強磁性示す 東大、半導体構造作製に成功 新たなデバイスへ道 日刊工業新聞 2003年10月16日 (33面) 
  16. 零下101度でも「強磁性」 東大、高速半導体使い実現 日経産業新聞 2003年10月24日 (6面) 
  17. 日本IBM科学賞関係記事
  18. 第17回科学賞に田中氏(東大大学院助教授)ら 日本IBMが6人選出 日本工業新聞 2003年11月7日 (2面) 
  19. 科学賞に6氏 日本IBMが発表 エレクトロニクス分野▽田中雅明 東京大学助教授 日経産業新聞 2003年11月7日
  20. 日本IBM科学賞 4分野6人に エレクトロニクス 田中雅明 東京大学助教授 日刊工業新聞 2003年11月7日
  21. 日本IBM科学賞に6人 エレクトロニクス分野 田中雅明 東京大学助教授 東京新聞2003年11月12日 産経新聞2003年11月16日 読売新聞2003年11月18日
  22. 東京大学助教授 田中雅明氏 日本IBM賞きょう受賞 スピンエレクトロニクスで研究成果「進歩へ新しい自由度」日本工業新聞2面 2003年11月28日
  23. 田中助教授ら6人が受賞 第17回日本IBM科学賞 日本工業新聞 2003年12月1日
  24. 第17回日本IBM科学賞 エレクトロニクス分野 田中雅明氏 日本物理学会誌 第59巻1号(2004年1月)p45.
  25. 第17回「日本IBM科学賞」受賞 戦略的創造研究推進事業 田中雅明研究者 JSTニュース Vol.1 No.4(2004年1月号)p.16.
  26. 東京大学新聞 2004年4月13日 東大学問ことはじめ 金曜2限に開講 数理・情報一般で学問する エレクトロニクスの仕組みを知る
  27. Simulation of Spin-MOSFET Predicts Strong Dependence of Spin Transport on Magnetic Configuration, MRS Bulletin Volume 29, No. 5 (May 2004) p.302, MRS Bulletin Web-site: http://www.mrs.org/publications/bulletin/2004/may/ http://www.mrs.org/publications/bulletin/2004/may/may04_researchers.pdf page 3
  28. Japan Nanonet Bulletin 第71号 2004年9月1日 研究者通信 菅原 聡 氏 東京大学大学院工学系研究科 電子工学専攻 助手 科学技術振興機構 戦略的創造研究推進事業さきがけタイプ「ナノと物性」研究者「シリコン強磁性半導体の創製とそのスピンデバイスへの応用」
  29. Matreials Update News & Features in nature (materials)   http://www.nature.com/materials/news/news/040429/portal/m040429-1.html 29 April 2004,  Manipulating spins in semiconductors -Electrical and optical control of ferromagnetism in semiconductors by Charlene Lobo: Physicists are currently trying to exploit the spin of the electron in addition to its charge in order to create ‘spintronic’ devices that will be smaller, more versatile and more robust than those at present making up silicon chips and circuit elements. Many of the proposed devices are based on magnetic semiconductors ? semiconductors that have been doped with a small amount (<5%) of magnetic atoms, such as Mn. However, for spintronics devices to become a reality, researchers must first demonstrate that the magnetism that results from the large-scale alignment of spins in a magnetic semiconductor can be externally manipulated. As reported at the Materials Research Society Spring Meeting in San Francisco1, Masaaki Tanaka and colleagues have now achieved electrical and optical control of ferromagnetism in semiconductor heterostructures at relatively high temperatures. Tanaka and colleagues studied a Mn-doped GaAs quantum well embedded within a field-effect transistor structure that enabled electrical measurements2. The researchers were able to electrically modulate the ferromagnetic transition temperature over the range 105?120 K by varying the voltage on the top gate of the transistor. They were also able to manipulate the magnetism using irradiation with polarized light, which produced an enhancement of ferromagnetic order. Although the modulated temperature range is small and still well below room temperature, the work provides a promising indication that functional spintronics devices could be fabricated using more suitable semiconductor heterostructures. References: 1. Tanaka M., & Nazmul A. M. Control of ferromagnetic order in semiconductor heterostructures with Mn delta doping. Abstract G1.4, MRS Spring Meeting (2004). 2. Nazmul A. M., Kobayashi S., Suguhara S. & Tanaka M. External control of magnetism in semiconductors at high temperature ( 100 K). Preprint at http://arxiv.org/abs/cond-mat/0309532 (2003).
  30. MSJ技術情報サービス 第16号 2005年10月17日 16.02  スピンエレクトロニクスに関する注目すべき報告相次ぐ: 第66回応用物理学会講演会において、スピンエレクトロニクスに関する多くの報告があった。特に東京大学の田中教授グループによるGeベースの新しい強磁性半導体Ge1-xFexに関する研究、東北大学の猪俣教授グループによるMgOンネル障壁を用いる強磁性2重トンネル接合におけるスピン偏極量子井戸とスピン注入磁化反転に関する研究、東北大学の宮崎教授グループによるホイスラーCo2MnSi合金を用いたMTJ素子の大きなTMR比に関する研究が注目された。http://www.wdc-jp.com/msj/information/051017/051017_02.html
  31. 2006年5月8日 日経産業新聞 次世代デバイス最前線1 スピントロニクス 電子の自転で情報処理 演算とメモリの2役
  32. 2006年8月2日 フジサンケイビジネスアイ 13面 論説室の興味津々 東京大学大学院工学系研究科教授 田中雅明氏
  33. 2006年12月28日 日刊工業新聞 第3回日本学術振興会賞 決定
  34. 田中雅明 「異分野の融合と横断的思考」 学術月報 第60巻第5号 pp.317-318 (2007年5月).
  35. 田中雅明 “A new spin on semiconductors” 東京大学電気系同窓会報 No.51, pp.4-5, 2007年6月. http://todaidenki.jp/articles/faculty/070531TanakaMasaaki.html
  36. 2007年10月10日 読売新聞 「ノーベル賞 仏独2教授物理学賞 音楽、映像情報の蓄積 貢献」 コメント
  37. スピントロニクス 電子のスピン効果が繰り出す次世代トランジスタの誕生を予感 田中雅明教授 東京大学テクノロジー&サイエンス October 2007 Vol.1 pp.26-27 日経BPムック
  38. 第4回日本学術振興会賞受賞;田畑仁氏 日本物理学会誌 2008年4月号 学会ニュース欄
  39. 保立和夫、田中雅明 グローバルCOEプログラム「セキュアライフ・エレクトロニクス」 東洋大学電気系同窓会コラム http://todaidenki.jp/articles/faculty/080526TanakaMasaaki.html
  40. 田中研究室の研究成果「スピン起電力と超巨大磁気抵抗効果の実現」 英国科学誌ネイチャーに掲載され、さまざまなメディアで報道
  41. 読売新聞 2009年3月9日夕刊 近くに磁石置くだけで発電 「スピン起電力」実現 東大チーム
  42. Yomiuri Online 近くに磁石置くだけで発電「スピン起電力」…東大チーム http://www.yomiuri.co.jp/science/news/20090309-OYT1T00706.htm
  43. 日刊工業新聞 2009年3月9日 「スピン起電力」実証 東北大、東大 トンネル実験で
  44. 化学工業日報 2009年3月9日 「スピン起電力」効果を初観測 東大など
  45. 東京大学 学術情報 2009年3月12日 電気・磁気変換の新原理「スピン起電力」の実現に成功-ナノデバイスにおける新しい電磁気学と「超」巨大磁気抵抗効果の発見- http://www.u-tokyo.ac.jp/public/pdf/210309.pdf
  46. 東北大学プレスリリース 2009年3月9日 電気・磁気変換の新原理「スピン起電力」の実現に成功 -ナノデバイスによる新しい電磁気学と「超」巨大磁気抵抗効果- http://www.tohoku.ac.jp/japanese/press_release/pdf2009/20090309.pdf
  47. 日経プレスリリース 2009年3月9日 電気・磁気変換の新原理「スピン起電力」の実現に成功 -ナノデバイスによる新しい電磁気学と「超」巨大磁気抵抗効果- http://release.nikkei.co.jp/attach_file/0214444_01.pdf
  48. 2009.3.17 ナノテクジャパンからのお知らせ 「電気・磁気変換の新原理”スピン起電力”の実現に成功」―ナノデバイスにおける新しい電磁気学と「超」巨大磁気抵抗効果の発見― http://nanonet.mext.go.jp/modules/news/article.php?a_id=537
  49. 日本経済新聞 2009年3月23日 静磁場で電気流れる新材料 東大・東北大など
  50. Nature vol.458 (7237), (Mar 2009) Highlights: 物性:スピン起電力 電子が回路を流れるとき、力が電荷に作用して電子のエネルギーを増大させる。これが起電力で、ファラデーの電磁誘導の法則によると、静磁場では起電力は発生しない。しかし、電子のスピンに作用する別の力が存在するため、静磁場中であっても、スピンのみに起因する起電力が生じる可能性が出てきた。P N Haiたちは今回、ナノスケールの磁性粒子を含む磁気トンネル接合を用いて、そのような効果を実現した。これらの構造体で起こった磁気エネルギーから電気エネルギーへの変換によって、100,000%という実用的な大きさの磁気抵抗応答が生じており、これが「スピン電池」の基礎となる可能性もある。 Letters to Nature p.489 http://www.natureasia.com/japan/nature/updates/index.php?id=71499&issue=7237
  51. NPG Asia Materials, featured highlight Magnetic nanostructures: Faraday’s law evolves (Published online 22 June 2009) http://www.natureasia.com/asia-materials/highlight.php?id=464 オンラインジャーナル Nature Publishing Group Asia Materials のハイライト 記事(featured highlight)に、 「磁性ナノ構造:ファラデーの法則は進化する」 と題する田中研究室の研究成果が紹介された。
  52. 田中・大矢研究室の「金属ナノ微粒子で10マイクロ秒と世界最長のスピン 緩和時間を観測した研究成果」が英国科学誌ネイチャー・ナノテクノロジーに掲載 されたほか、さまざまなメディアで報道
  53. 金属ナノ微粒子における長いスピン緩和時間を観測 http://www.u-tokyo.ac.jp/public/pdf/220705.pdf (東京大学よりプレスリリース、2010年7月5日)
  54. 東大、金属ナノ微粒子で10マイクロ秒と世界最長の「スピン緩和時間」観測 日刊工業新聞、2010年7月12日掲載 http://www.nikkan.co.jp/news/nkx0720100712eaac.html
  55. 東大、金属ナノ微粒子における長いスピン緩和時間を観測 日経プレスリリース、2010年7月5日 http://release.nikkei.co.jp/detail.cfm?relID=255610
  56. 金属ナノ微粒子における長いスピン緩和時間を観測 Nanotech Japan 2010.7.20 https://nanonet.nims.go.jp/modules/news/article.php?a_id=872
  57. 東大、金属ナノ微粒子で10μsのスピン緩和時間の観測に成功 マイコミジャーナル 2010/07/07 http://journal.mycom.co.jp/news/2010/07/07/002/index.html
  58. 東大、金属ナノ微粒子で10マイクロ秒と世界最長の「スピン緩和時間」観測 アクティブサイエンスレビュー 2010年7月15日 http://sci-review.activeray-sci.com/?eid=1597786
  59. Editors’ Choice from APEX and JJAP Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111) by Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya, and Masaaki Tanaka Appl. Phys. Express 3 (2010) 123002 http://apex.jsap.jp/link?APEX/3/123002/ View Figure 2: http://apex.jsap.jp/alert/img-figs/3/APEX-3-123002_Fig2_large.gif