Masaaki Tanaka Laboratory, Dept of Electronic Engineering, The University of Tokyo - Facilities

Masaaki Tanaka Laboratory, Dept of Electronic Engineering, The University of Tokyo

Research Facilities

MBE(Molecular Beam Epitaxy)

ULVAC 508

Side view K-cell temperature controllers
RHEED monitor Back view

Base pressure1×10-10Torr
Installed sourcesGa,Al,In(Group III)
Si, Be (Dopants)
Mn (Transition element、for magnetic material)
As(Group V) EPI Valved craker cell 500cc
In-situ observationReflection High Energy Electron Diffraction (RHEED)

Magneto-optical measurement system

JASCO J700

Whole view

Electromagnet and Cooling system

SCM

Measurement techniqueCircular polarization modulation method
Faraday rotation angle
Magnetic circular dichroism(MCD)
Photo detectorGaAs, S1 Photomultiplier
Mesurable wavelength rage0.2-1.1μm
Magnetic field intensityMax 1.2T(electromagnet), 7T(superconducting magnet)

Magneto-optical measurement system(for long wavelength range)

MO setup

Measurement techniqueCircular polarization modulation method
Faraday rotation angle
Magnetic circular dichroism(MCD)
Photo detectorSi PD, InGaAs PIN PD, InGaAs Photomultiplier
Mesurable wavelength rage0.8-1.7μm
Magnetic field intensityMax 1.2T(electromagnet)

Photoluminescence(PL) spectra measurement system

PL1 PL2

Light source for excitationAr+ laser (488nm, 514nm)
Photo detectorS1 Photomultiplier
InGaAs Photomultiplier
Liquid nitrogen cooled Ge detector
Measurement wavelength range0.6-1.7μm
Measurement temperature8K~300K

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